Výsledky vyhledávání - "Molodkin, V.B."

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Dynamical X-Ray Diffraction Characterization of the Self-Organized Quantum Dot Formation In Imperfect Semiconductor Superlattices

Autor: Lizunova, S.V., Skakunova, O.S., Olikhovskii, S.I., Len, E.G., Molodkin, V.B., Klad’ko, V.P., Kyslovs’kyy, Ye.M., Sheludchenko, B.V.

The self-organized quantum dot (QD) formation in InGaAs/GaAs superlattices grown by molecular beam epitaxy was investigated by the high-resolution X-ray diffraction technique. The investigated samples had the identical structure consisting of fifteen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2001::ccf6160f47385abe285d71dc6bde1fc6
http://essuir.sumdu.edu.ua/handle/123456789/42647

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Simulation of Reciprocal Space Maps for Thin Ion-Implanted Layers in Yttrium-Iron Garnet Films with Defects

Autor: Olikhovskii, S.I., Skakunova, O.S., Molodkin, V.B., Len, E.G., Ostafiychuk, B.K., Pylypiv, V.M.

Numerical simulation of the reciprocal space maps measured from the ion-implanted single-crystal yttrium-iron garnet films on gadolinium-gallium garnet substrate has been carried out basing on the theoretical model of the triple-crystal dynamical dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2001::91cc66db72ed8688577dabe384306c84
http://essuir.sumdu.edu.ua/handle/123456789/42642

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X-Ray Diffraction Characterization of Nanoscale Strains and Defects in Yttrium Iron Garnet Films Implanted with Fluorine Ions

Autor: Olikhovskii, S.I., Skakunova, O.S., Molodkin, V.B., Lizunov, V.V., Kyslovs’kyy, Ye.M., Vladimirova, T.P., Reshetnyk, O.V., Pylypiv, V.M., Kotsyubynsky, V.O., Ostafiychuk, B.K., Yaremiy, I.P., Garpul’, O.Z.

The theoretical diffraction model for a crystalline multilayer system with inhomogeneous strain profile and randomly distributed defects has been created by using the statistical dynamical theory of X-ray diffraction in imperfect crystals. The dynami

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42c12c3e90f6b130293fc82c8af5cb4c

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Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

Autor: Vladimirova, T.P., Kyslovs’kyy, Ye.M., Molodkin, V.B., Olikhovskii, S.I., Koplak, O.V., Kochelab, E.V.

Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by analyzing the rocking curves, whi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::28c1acae326aa90bc36ab20b034c41a7
http://dspace.nbuv.gov.ua/handle/123456789/117799

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Double- and triple-crystal X-ray diffractometry of microdefects in silicon

Autor: Molodkin, V.B., Olikhovskii, S.I., Kyslovskyy, Ye.M., Len, E.G., Reshetnyk, O.V., Vladimirova, T.P., V.V. Lizunov, V.V., Lizunova, S.V.

The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::dca10779ed0c34bacd65dfaae3d1950a
http://dspace.nbuv.gov.ua/handle/123456789/118577

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Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

Autor: Fodchuk, I.M., Gevyk, V.B., Gimchinsky, O.G., Kislovskii, E.N., Kroytor, O.P., Molodkin, V.B., Olihovskii, S.I., Pavelescu, E.M., Pessa, M.

The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considere

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::391dd4d22231ac3a502a8747f2e5dfcd
http://dspace.nbuv.gov.ua/handle/123456789/118086

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Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon

Autor: Datsenko, L.I., Klad’ko, V.P., Lytvyn, P.M., Domagala, J., Machulin, V.F., Prokopenko, I.V., Molodkin, V.B., Maksimenko, Z.V.

Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r as well as concentration n, b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::9393962c06db565dc40c62b9708b3ba1
http://dspace.nbuv.gov.ua/handle/123456789/119262

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