CAMRAD: Development of a Multi-Megagray Radiation Hard CMOS Camera for Dismantling Operations

Autor: Goiffon, Vincent, Allanche, Timothé, Muller, Cyprien, Girard, Sylvain, Paillet, Philippe, Macé, Jean-Reynald, Osmond, Mélanie, Burnichon, P., Plumeri, Stéphane, Baudu, J-P, Boukenter, Aziz, Magnan, Pierre, Rizzolo, Serena, Corbière, Franck, Duhamel, Olivier, Rousson, Johanna, Desjonqueres, H., Molina, Romain, Ouerdane, Y., Lépine, Thierry, Clerc, Raphael

Publikováno v: DEM 2018-Dismantling Challenges: Industrial Reality, Prospects and Feedback Experience
DEM 2018-Dismantling Challenges: Industrial Reality, Prospects and Feedback Experience, Oct 2018, Avignon, France

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3515::a0fb2c2d51a48526eed20187123b1d61
https://ujm.hal.science/ujm-01964748

Toward Multi-MGy / Grad Radiation Hardened CMOS Image sensors for Nuclear Applications

Autor: Goiffon, Vincent, Corbière, Franck, Rolando, Sébastien, Estribeau, Magali, Magnan, Pierre, Avon, Barbara, Baer, Jérémy, Gaillardin, Marc, Paillet, Philippe, Girard, Sylvain, Molina, Romain, Chabane, Aziouz, Cervantes, Paola, Marcandella, Claude

The aim of this work is to design and characterize a fully radiation-hardened-by-design CMOS Image Sensor in the MGy range to demonstrate that an imaging system which can withstand MGy dose levels is feasible.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f343e8a53bff3235ae0c1925f48eb8cd
https://oatao.univ-toulouse.fr/15773/

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Radiation Effects on Pinned Photodiode CMOS Image Sensors: Overview of Pixel Performance Degradation Due to Total Ionizing Dose

Autor: Goiffon, Vincent, Estribeau, Magali, Marcelot, Olivier, Cervantes, Paola, Magnan, Pierre, Gaillardin, Marc, Virmontois, Cédric, Martin-Gonthier, Philippe, Molina, Romain, Corbière, Franck, Girard, Sylvain, Paillet, Philippe, Marcandella, Claude

Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 1Mrad(SiO2). In addition to the usually reported dark current increase and quantum efficiency drop at sh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f0b698e59cb2586a1fdd938eafa1b68c
https://oatao.univ-toulouse.fr/11417/

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