Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mokhtar Mohammadi Ghanatghestani"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:091011
Multi-valued logic potentially increases the efficiency of arithmetic circuits and digital signal processing. Quaternary logic can be suggested as a solution to the problem of power consumption and connection complexity in binary digital systems. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf2f9e31ba2b3c89ad2c8bc31641d2e
https://doi.org/10.1149/2162-8777/ac91f4
https://doi.org/10.1149/2162-8777/ac91f4
Autor:
Akram Mohammadi, Mokhtar Mohammadi Ghanatghestani, Amir Sabbagh Molahosseini, Yavar Safaei Mehrabani
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:081010
In this paper, a novel approximate Full Adder cell is presented which is based on the combination of standard CMOS logic (S-CMOS) and pass transistor logic (PTL) styles. The carbon nanotube field-effect transistor (CNFET) technology is used to simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13dc8a5b62c13475bfdd4e876ac448de
https://doi.org/10.1149/2162-8777/ac861c
https://doi.org/10.1149/2162-8777/ac861c
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:368-377
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a62513dbc78b0febe44bd317d6a1a8e
https://doi.org/10.1166/jno.2018.2244
https://doi.org/10.1166/jno.2018.2244
Publikováno v:
Journal of Computational and Theoretical Nanoscience. 12:5457-5462
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b8c196d93dada837edddb9dd1eefdf6
https://doi.org/10.1166/jctn.2015.4546
https://doi.org/10.1166/jctn.2015.4546
Publikováno v:
Volume: 25, Issue: 3 2399-2409
Turkish Journal of Electrical Engineering and Computer Science
Turkish Journal of Electrical Engineering and Computer Science
Carbon nanotube field-effect transistors (CNFETs) utilize an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure, which holds great promise for the future of integrated circuits. In this paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74a8a80acb0e7cd7e5a1205f1c044346
https://dergipark.org.tr/tr/pub/tbtkelektrik/issue/35784/400579
https://dergipark.org.tr/tr/pub/tbtkelektrik/issue/35784/400579
