Zobrazeno 1 - 10
of 321
pro vyhledávání: '"Mokhov E."'
Autor:
Murzakhanov, F. F., Sadovnikova, M. A., Mamin, G. V., Shurtakova, D. V., Mokhov, E. N., Kazarova, O. P., Gafurov, M. R.
Publikováno v:
JETP Letters 119.8 (2024): 593-598
High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin I = 0) 6H-
Externí odkaz:
http://arxiv.org/abs/2407.13351
Autor:
Breev, I. D., Shang, Z., Poshakinskiy, A. V., Singh, H., Berencén, Y., Hollenbach, M., Nagalyuk, S. S., Mokhov, E. N., Babunts, R. A., Baranov, P. G., Suter, D., Tarasenko, S. A., Astakhov, G. V., Anisimov, A. N.
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocol
Externí odkaz:
http://arxiv.org/abs/2107.06989
Autor:
Breev, I. D., Poshakinskiy, A. V., Yakovleva, V. V., Nagalyuk, S. S., Mokhov, E. N., Hübner, R., Astakhov, G. V., Baranov, P. G., Anisimov, A. N.
Publikováno v:
Appl. Phys. Lett. 118, 084003 (2021)
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as
Externí odkaz:
http://arxiv.org/abs/2012.07588
Autor:
Breev, I. D., Likhachev, K. V., Yakovleva, V. V., Hübner, R., Astakhov, G. V., Baranov, P. G., Mokhov, E. N., Anisimov, A. N.
Publikováno v:
Journal of Applied Physics 129, 055304 (2021)
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using con
Externí odkaz:
http://arxiv.org/abs/2011.13693
Akademický článek
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Autor:
Soltamov, V. A., Kasper, C., Poshakinskiy, A. V., Anisimov, A. N., Mokhov, E. N., Sperlich, A., Tarasenko, S. A., Baranov, P. G., Astakhov, G. V., Dyakonov, V.
Publikováno v:
Nat. Commun. 10, 1678 (2019)
Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significa
Externí odkaz:
http://arxiv.org/abs/1807.10383
Autor:
Mokhov, E. N.1 (AUTHOR), Davydov, V. Yu.1 (AUTHOR) Valery.Davydov@mail.ioffe.ru, Smirnov, A. N.1 (AUTHOR), Nagaluk, S. S.1 (AUTHOR)
Publikováno v:
Semiconductors. Nov2023, Vol. 57 Issue 11, p483-487. 5p.
Autor:
Tarasenko, S. A., Poshakinskiy, A. V., Simin, D., Soltamov, V. A., Mokhov, E. N., Baranov, P. G., Dyakonov, V., Astakhov, G. V.
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structur
Externí odkaz:
http://arxiv.org/abs/1707.05503
Publikováno v:
Journal of Applied Physics, Vol. 119(13), 135706 (2016)
We present the detailed study of the spin kinetics of the nitrogen (N) donor electrons in 6H SiC wafers grown by Lely method and by sublimation "sandwich method" (SSM) with a donor concentration of about 10^17 cm^-3 at T = 10-40 K. The donor electron
Externí odkaz:
http://arxiv.org/abs/1604.02920
Autor:
Savchenko, D., Kalabukhova, E., Shanina, B., Cichon, S., Honolka, J., Kiselov, V., Mokhov, E.
Publikováno v:
Journal of Applied Physics, Vol. 119, 045701 (2016)
We have studied the temperature behavior of the electron spin resonance (ESR) spectra of nitrogen (N) donors in n-type 6H SiC crystals grown by Lely and sublimation sandwich methods (SSM) with donor concentration of 10^17 cm^(-3) at T=60-150 K. A bro
Externí odkaz:
http://arxiv.org/abs/1511.06711