Zobrazeno 1 - 10
of 186
pro vyhledávání: '"Mokerov, V.G."'
Publikováno v:
Semiconductors. Oct2003, Vol. 37 Issue 10, p1217. 5p.
Autor:
Kulbachinskii, V.A., Vasilevskii, I.S., Lunin, R.A., Galistu, G.M., de Visser, A., Galiev, G.B., Mokerov, V.G.
Publikováno v:
Semiconductors, 22, 222-228. Maik Nauka-Interperiodica Publishing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::ed169a96ec5425f08427916640ccc05d
https://dare.uva.nl/personal/pure/en/publications/electron-transport-and-optical-properties-of-shallow-gaasingaasgaas-quantum-wells-with-a-thin-central-a1as-barrier(5a6c0996-6841-4803-a10a-20e6f66dc1d8).html
https://dare.uva.nl/personal/pure/en/publications/electron-transport-and-optical-properties-of-shallow-gaasingaasgaas-quantum-wells-with-a-thin-central-a1as-barrier(5a6c0996-6841-4803-a10a-20e6f66dc1d8).html
Autor:
Mokerov, V.G., Velikovskii, L.E., Kanametova, Z.T., Kaminskii, V.E., Sazonov, P.V., Graul, J., Semchinova, O.
Publikováno v:
Mokerov, V.G. ; Velikovskii, L.E. ; Kanametova, Z.T. ; Kaminskii, V.E. ; Sazonov, P.V. ; Graul, J. ; Semchinova, O. (2003) AlGaN/GaN-heterojunction FET with inverted 2DEG Channel. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Novel heterojunction AlGaN/GaN-FET with inverted device channel is investigated.FET-heterostructures were grown by MBE on sapphire substrates. Devices were fabricated with 0,25 µ T-shaped gates,using electron beam lithography.Electron density profil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dcf270b79a0aa74469e0b95f9f4312e1
http://amsacta.unibo.it/454/
http://amsacta.unibo.it/454/
Publikováno v:
Mokerov, V.G. ; Fedorov, Yu.V. ; Hook, A.V. ; Velikoski, L.E. (2000) Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Modulation doped N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs-heterostructures with InAs-quantum dots have been grown and investigated. Their photoluminescence spectra and electrical transport properties both in low and high electric fields were studied. Using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::615c047da9ab4d36a2d8fc2ca672f2ab
http://amsacta.unibo.it/203/
http://amsacta.unibo.it/203/
Autor:
Kulbachinskii, V.A., Kytin, V.G., Lunin, R.A., Golikov, A.V., Demin, A.V., Mokerov, V.G., Bugaev, A.S., Senichkin, A.P., Koenraad, P.M., van Schaijk, R.T.F., de Visser, A.
Publikováno v:
Proceedings of the 7th International Symposium "Nanostructures: Physics and Technology", 299-302
STARTPAGE=299;ENDPAGE=302;TITLE=Proceedings of the 7th International Symposium "Nanostructures: Physics and Technology"
STARTPAGE=299;ENDPAGE=302;TITLE=Proceedings of the 7th International Symposium "Nanostructures: Physics and Technology"
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::fbb9cc348afe10131ff377ad07ea3444
https://dare.uva.nl/personal/pure/en/publications/observation-of-negative-persistent-photoconductivity-in-gaas-deltadoped-by-sn(fe5470db-61db-4551-8be9-d4d50a2a84be).html
https://dare.uva.nl/personal/pure/en/publications/observation-of-negative-persistent-photoconductivity-in-gaas-deltadoped-by-sn(fe5470db-61db-4551-8be9-d4d50a2a84be).html
Autor:
van Schaijk, R.T.F., de Visser, A., Kulbachinskii, V.A., Kytin, V.G., Lunin, R.A., Vvedenskiy, M.B., Mokerov, V.G., Bugaev, A.S., Senichkin, A.P.
Publikováno v:
Physica B-Condensed Matter, 258, 243-247. Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::684fdfa9160361d145404912104d3566
https://dare.uva.nl/personal/pure/en/publications/magnetotransport-in-gaas-deltadoped-by-sn(1fd9dc7e-2dcb-414f-926a-8ca822abc1e7).html
https://dare.uva.nl/personal/pure/en/publications/magnetotransport-in-gaas-deltadoped-by-sn(1fd9dc7e-2dcb-414f-926a-8ca822abc1e7).html
Autor:
Kulbachinskii, V.A., Kytin, V.G., Lunin, R.A., Vvedenskiy, M.B., Mokerov, V.G., Bugaev, A.S., Senichkin, A.P., Koenraad, P.M., van Schaijk, R.T.F., Visser, de, A.
Publikováno v:
Proc. of the 6th Int. Symp. Nanostructures: Physics and Technology, 293-296
STARTPAGE=293;ENDPAGE=296;TITLE=Proc. of the 6th Int. Symp. Nanostructures: Physics and Technology
STARTPAGE=293;ENDPAGE=296;TITLE=Proc. of the 6th Int. Symp. Nanostructures: Physics and Technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::ffd91b16b591a5b9dd0bf2f60efd17db
https://research.tue.nl/nl/publications/b60504b4-6f4b-492e-a4e4-c4a693b3c63a
https://research.tue.nl/nl/publications/b60504b4-6f4b-492e-a4e4-c4a693b3c63a
Autor:
Kulbachinskii, V.A., Lunin, R.A., Vasil'Evskii, I.S., Galiev, G.B., Mokerov, V.G., Kaminskii, V.E.
Publikováno v:
International Journal of Nanoscience; Dec2003, Vol. 2 Issue 6, p565-573, 9p
Autor:
Galiev, G.B., Kaminski&icaron;, V.É., Mokerov, V.G., Avakyants, L.P., Bokov, P.Yu., Chervyakov, A.V., Kul'bachinski&icaron;, V.A.
Publikováno v:
Semiconductors; Jan2003, Vol. 37 Issue 1, p77, 5p
Autor:
Kul'bachinskii, V.A., Lunin, R.A., Rogozin, V.A., Mokerov, V.G., Fedorov, Yu.V., Khabarov, Yu.V., Narumi, E., Kindo, K., de Visser, A.
Publikováno v:
Semiconductors; Jan2003, Vol. 37 Issue 1, p70, 7p