Boron-Doped Silicon Surfaces from B2H6 Passivated by ALD Al2O3 for Solar Cells

Autor: Mok, K. R C Caroline, Van De Loo, Bas W H, Vlooswijk, Ard H G, Kessels, W. M M Erwin, Nanver, Lis K.

Publikováno v: Mok, K R C C, Van De Loo, B W H, Vlooswijk, A H G, Kessels, W M M E & Nanver, L K 2015, ' Boron-Doped Silicon Surfaces from B 2 H 6 Passivated by ALD Al 2 O 3 for Solar Cells ', IEEE Journal of Photovoltaics, vol. 5, no. 5, 7130564, pp. 1310-1318 . https://doi.org/10.1109/JPHOTOV.2015.2438640

A p+-doping method for silicon solar cells is presented whereby boron atoms from a pure boron (PureB) layer deposited by chemical vapor deposition using B2H6 as precursor were thermally diffused into silicon. The applicability of this doping process

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https://vbn.aau.dk/da/publications/acd0b034-c567-4764-9814-88aeba06adfd