Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Mojtaba Asadirad"'
Autor:
Rino Choi, Cuong-Nguyen Manh, Sara Pouladi, Seung Kyu Oh, Venkat Selvamanickam, Jiyoung Kim, Jae-Hyun Ryou, Jie Chen, Monika Rathi, Devendra Khatiwada, Pavel Dutta, Shahab Shervin, Mojtaba Asadirad, Weijie Wang
Publikováno v:
Solar Energy Materials and Solar Cells. 199:122-128
We present a numerical simulation study of the effects of low-angle grain boundaries (GBs) in a single-crystal-like GaAs thin-film material on its photovoltaic performance. Here, 1D and 2D modeling are employed to simulate a solar-cell (SC) device ba
Autor:
Yao Yao, Shahab Shervin, Venkat Selvamanickam, Sara Pouladi, Ying Gao, Seung Kyu Oh, Jae-Hyun Ryou, Keon-Hwa Lee, Pavel Dutta, Mojtaba Asadirad, Devendra Khatiwada, Sicong Sun, Yongkuan Li, Monika Rathi
Publikováno v:
Progress in Photovoltaics: Research and Applications. 27:30-36
Autor:
Venkat Selvamanickam, Mojtaba Asadirad, Pavel Dutta, Ying Gao, Seung Kyu Oh, Jeomoh Kim, Sara Pouladi, Shahab Shervin, Keon Hwa Lee, Jae-Hyun Ryou, Sung-Nam Lee
Publikováno v:
IEEE Electron Device Letters. 38:217-220
We theoretically study the change of the performance characteristics with various mechanical bending conditions for flexible thin-film transistors (TFTs) by two-dimensional device simulation. The characteristics of newly developed flexible TFTs with
Autor:
Keon-Hwa Lee, Sicong Sun, Eduard Galstyan, Sara Pouladi, Ying Gao, Mojtaba Asadirad, Venkat Selvamanickam, Yongkuan Li, Shahab Shervin, Yao Yao, Jae-Hyun Ryou, Monika Rathi, Pavel Dutta
Publikováno v:
ACS Applied Materials & Interfaces. 8:29565-29572
Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintention
Autor:
Mojtaba Asadirad, June-o Song, Jeong Tak Oh, Shahab Shervin, Keon Hwa Lee, Seung Kyu Oh, Jae-Hyun Ryou, Yong-Tae Moon
Publikováno v:
IEEE Photonics Technology Letters. 28:1956-1959
Demonstrated are visible GaN-based light-emitting diodes (LEDs) on economical large-area Si substrates using an advanced device and packaging architecture to improve optical output power, while reducing manufacturing costs. The process employs thin-f
Autor:
Sung-Nam Lee, Seung-Hwan Kim, Hyun Jung Park, Jae-Hyun Ryou, Shahab Shervin, Keon Hwa Lee, Joon Seop Kwak, Mojtaba Asadirad
Publikováno v:
physica status solidi (a). 213:2769-2772
Patterned gallium oxide (Ga2O3) using one-step patterning followed by oxygen plasma treatment on a p-GaN layer can function as both current-blocking and optical-scattering regions for uniform current spreading and improved light-extraction efficienci
Publikováno v:
ACS Photonics. 3:486-493
We show that bending of flexible light-emitting diodes based on polar group III–V nitride structures can function as more than mechanically flexible devices through numerical studies. Controlled external bending can improve internal quantum efficie
Autor:
Yao Yao, Sicong Sun, Venkat Selvamanickam, Sara Pouladi, Seung Kyu Oh, Shahab Shervin, Pavel Dutta, Monika Rathi, Yongkuan Li, Ying Gao, Jie Chen, Jae-Hyun Ryou, Mojtaba Asadirad, Devendra Khatiwada
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
III-V compound semiconductors are the best photovoltaic solar cell (SC) materials for highest conversion efficiencies. However, they are expensive and lack in mechanical flexibility and manufacturing scalability. We developed a new PV platform where
Autor:
Kathy Olenick, Shahab Shervin, Keon Hwa Lee, Dong Kyu Lee, Jae-Hyun Ryou, Joon Seop Kwak, John A. Olenick, Shivkant Singh, Venkat Venkateswaran, Anastassios Mavrokefalos, Seung Kyu Oh, Sung-Nam Lee, Seung-Hwan Kim, Mojtaba Asadirad
Publikováno v:
IEEE Electron Device Letters. 37:615-617
We demonstrate flip-chip light-emitting diodes (FC-LEDs) on a flexible yttria-stabilized zirconia (YSZ) substrate and compare them with FC-LEDs on a polymeric substrate. Degradation of luminescence intensity and red-shift of peak wavelength are not o
Autor:
Yao Yao, Monika Rathi, Devendra Khatiwada, Sara Pouladi, Seung Kyu Oh, Jae-Hyun Ryou, Pavel Dutta, Shahab Shervin, Venkat Selvamanickam, Mojtaba Asadirad
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
We demonstrate flexible single-junction III-V solar cells based on single-crystal-like GaAs thin films directly grown on a metal tape. The epitaxial (Al)GaAs thin-film structures are developed on flexible polycrystalline Hastelloy tapes using crystal