Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Mohseni, P. K."'
Autor:
Zhou, Jie, Vincent, Daniel, Acharya, Sudip, Ojo, Solomon, Abrand, Alireza, Liu, Yang, Gong, Jiarui, Liu, Dong, Haessly, Samuel, Shen, Jianping, Xu, Shining, Li, Yiran, Lu, Yi, Stanchu, Hryhorii, Mawst, Luke, Claflin, Bruce, Mohseni, Parsian K., Ma, Zhenqiang, Yu, Shui-Qing
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventiona
Externí odkaz:
http://arxiv.org/abs/2409.09752
Autor:
Liu, Yang, Gong, Jiarui, Acharya, Sudip, Lia, Yiran, Abrand, Alireza, Rudie, Justin M., Zhou, Jie, Lu, Yi, Abbasi, Haris Naeem, Vincent, Daniel, Haessly, Samuel, Tsai, Tsung-Han, Mohseni, Parsian K., Yu, Shui-Qing, Ma, Zhenqiang
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasin
Externí odkaz:
http://arxiv.org/abs/2408.16884
Autor:
Liu, Yang, Li, Yiran, Acharya, Sudip, Zhou, Jie, Gong, Jiarui, Abrand, Alireza, Lu, Yi, Vincent, Daniel, Haessly, Samuel, Mohseni, Parsian K., Yu, Shui-Qing, Ma, Zhenqiang
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra
Externí odkaz:
http://arxiv.org/abs/2408.08451
Autor:
Hasan, Md Nazmul, Zheng, Yixiong, Lai, Junyu, Swinnich, Edward, Licata, Olivia Grace, Baboli, Mohadeseh A., Mazumder, Baishakhi, Mohseni, Parsian K., Seo, Jung-Hun
The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time periods prior to
Externí odkaz:
http://arxiv.org/abs/2110.12496
Autor:
Hasan, Md Nazmul, Zheng, Yixiong, Lai, Junyu, Swinnich, Edward, Licata, Olivia Grace, Baboli, Mohadeseh A., Mazumder, Baishakhi, Mohseni, Parsian K., Seo, Jung-Hun
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in the conduc
Externí odkaz:
http://arxiv.org/abs/2107.06983
Autor:
Liu, Dong, Cho, Sang June, Seo, Jung-Hun, Kim, Kwangeun, Kim, Munho, Shi, Jian, Yin, Xin, Choi, Wonsik, Zhang, Chen, Kim, Jisoo, Baboli, Mohadeseh A., Park, Jeongpil, Bong, Jihye, Lee, In-Kyu, Gong, Jiarui, Mikael, Solomon, Ryu, Jae Ha, Mohseni, Parsian K., Li, Xiuling, Gong, Shaoqin, Wang, Xudong, Ma, Zhenqiang
Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form ab
Externí odkaz:
http://arxiv.org/abs/1812.10225
Akademický článek
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Akademický článek
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Publikováno v:
Phys. Rev. Lett. 110, 126406 (2013)
We report on sub-gap transport measurements of an InAs nanowire coupled to niobium nitride leads at high magnetic fields. We observe a zero-bias anomaly (ZBA) in the differential conductance of the nanowire for certain ranges of magnetic field and ch
Externí odkaz:
http://arxiv.org/abs/1212.1101
Publikováno v:
NanoLett., 2008, 8(11) pp 4075-4080
Poly(ethylene imine) functionalized carbon nanotube thin films, prepared using the vacuum filtration method, were decorated with Au nanoparticles by in situ reduction of HAuCl4 under mild conditions. These Au nanoparticles were subsequently employed
Externí odkaz:
http://arxiv.org/abs/0812.2796