Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Mohsen Purahmad"'
Publikováno v:
Solid-State Electronics. 148:58-62
Photoelectrical mechanism of single Indium Oxide nanowires have been investigated using current-voltage characteristics measurements varying with temperature. The fabricated In2O3 nanowires show high photosensitivity up to 140 at room temperature. It
Publikováno v:
Journal of Electronic Materials. 43:740-745
The effect of the Ar plasma during metal deposition on the photoluminescence (PL) of metal-coated ZnO nanowires (NWs) has been investigated. Strong enhancement of near-band-edge emission (NBE) is observed for ZnO NWs coated with Al and Ni nanoparticl
Autor:
Xenia Meshik, Kimber Brenneman, Yiping Zhao, Eugene Zakar, Barbara Nichols, Michael A. Stroscio, Preeti Pratap, Justin Abell, Mitra Dutta, Shripriya Poduri, Sidra Farid, Mohsen Purahmad, Ke Xu
Publikováno v:
Challenges and Advances in Computational Chemistry and Physics ISBN: 9789401788472
This review will highlight recent research underlying the design of novel nanodevices and nanosensors that incorporate graphene, nanodots, nanowires, and biomolecules including DNA aptamers and peptides. The emphasis is on models and theory that guid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83df3a7180a2d3758804a80429165273
https://doi.org/10.1007/978-94-017-8848-9_3
https://doi.org/10.1007/978-94-017-8848-9_3
Autor:
Heinz H. Busta, Tatjana Dankovic, Poya Yasaei, Khodr Maamari, E. Tsang, N. Strach, A. Meyer, Alan Feinerman, Mrinal Mathur, Tejumade Durowade, A. Solat, J. Huang, Amirhossein Behranginia, J. Lee, Mohsen Purahmad, A. Raghunathan, S. Chang, I. Mohedano, K. Spratt, N. Krzyzanowski, H. Tahiru, M. Gouk, J. Counts, M. Valencia, X. Cui, M. Silvestri, X. Zhang, Maksym Plakhotnyuk
Publikováno v:
2013 26th International Vacuum Nanoelectronics Conference (IVNC).
A 20nm thick Ni resistor element was fabricated on a 1μm thick, 400μm wide silicon nitride bridge via bulk micromachining. By applying a given power to the resistor its temperature increases, as the pressure decreases, since fewer gas particles are
Publikováno v:
2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012).
The room and low temperature photoluminescence (PL) spectra of as grown zinc oxide (ZnO) nanowires and those coated with aluminum (Al) and nickel (Ni) nanoparticles by RF magnetron sputtering have been investigated. A strong enhancement of UV emissio
Publikováno v:
2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012).
We have investigated the copolymer polyvinylidene fluoride, (PVDF-trifluoroethylene) for energy harvesting. Polyvinylidene fluoride (PVDF) nanofibers were electrospun on indium tin oxide (ITO) coated plastic. The electrical response of nanofibers at
Publikováno v:
2012 15th International Workshop on Computational Electronics.
We have investigated the effect of piezoelectric charges on the surface depletion region of ZnO NWs. By considering an inner region with a non-negligible density of free carriers and a depleted region at surface of the ZnO NWs and by solving the Pois
Publikováno v:
2012 15th International Workshop on Computational Electronics.
Computational analysis on the emission properties of ZnO nano wires (NWs) and coreshell quantum dots (QDs) have been made by considering the effects of scattering mechanism of the incident field and the total electric field from the surface of varied
Publikováno v:
2008 3rd International Conference on Sensing Technology.
The hydrogen sensitivity of the reverse current in silver-rutile Schottky diode is investigated. Sample devices were prepared by the partial sintering of silver particles on thermally oxidized titanium foil. The device exhibited Schottky-type current
Autor:
Mohsen Purahmad, Iman Rezenejad Gatabi
Publikováno v:
2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems.
In this paper, we present a new model for an organic pixel addressing circuit based on four-transistor configuration. The proposed circuit doesn’t have the problems of regular configurations which are based on four-thin film transistors (TFT). Circ