Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Mohd Syamsul Nasyriq Samsol Baharin"'
Autor:
Mohamed Fauzi Packeer Mohamed, Mohamad Faiz Mohamed Omar, Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Mohd Hendra Hairi, Shaili Falina, Mohd Syamsul Nasyriq Samsol Baharin
Publikováno v:
Micromachines, Vol 12, Iss 12, p 1497 (2021)
Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-fr
Externí odkaz:
https://doaj.org/article/3bb0cdc7fe0f455e82773736bb267da2
Autor:
Nur Iwana Mohd Ikhwan, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Asrulnizam Abd Manaf, Mohd Syamsul Nasyriq Samsol Baharin, Mohd Hendra Hairi, Alhan Farhanah Abd Rahim
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811681288
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::754add054b7b0c2c0cbcd6909b9b9db5
https://doi.org/10.1007/978-981-16-8129-5_135
https://doi.org/10.1007/978-981-16-8129-5_135
Autor:
Mohamad Faiz Mohamed Omar, Muhammad Firdaus Akbar Jalaludin Khan, Mohd Syamsul Nasyriq Samsol Baharin, Mohd Hendra Hairi, Nor Azlin Ghazali, Mohamed Fauzi Packeer Mohamed, Shaili Falina
Publikováno v:
Micromachines, Vol 12, Iss 1497, p 1497 (2021)
Micromachines
Micromachines; Volume 12; Issue 12; Pages: 1497
Micromachines
Micromachines; Volume 12; Issue 12; Pages: 1497
Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4841cfd7f4caa7a414c18c5a7a548d57
https://www.mdpi.com/2072-666X/12/12/1497
https://www.mdpi.com/2072-666X/12/12/1497