Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Mohd Syamsul"'
Publikováno v:
Results in Physics, Vol 64, Iss , Pp 107952- (2024)
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limited by the high electric field near the gate edge. Using CO
Externí odkaz:
https://doaj.org/article/f480d83f390f45ea9ef7028d6ff7f806
Autor:
Najihah Fauzi, Rahil Izzati Mohd Asri, Mohamad Faiz Mohamed Omar, Asrulnizam Abd Manaf, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul
Publikováno v:
Micromachines, Vol 14, Iss 2, p 325 (2023)
High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify c
Externí odkaz:
https://doaj.org/article/ed725dd24478415c85f58d688e4f2788
Autor:
Yusnizam Yusuf, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, Mohd Syamsul
Publikováno v:
Crystals, Vol 13, Iss 1, p 90 (2023)
This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the
Externí odkaz:
https://doaj.org/article/ded32dfc16404d6692249f61464b62cf
Publikováno v:
Micromachines, Vol 13, Iss 12, p 2133 (2022)
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor
Externí odkaz:
https://doaj.org/article/7ce53479f1c149eb8aef0bd5ec6c368d
Autor:
Shaili Falina, Khairu Anuar, Saiful Arifin Shafiee, Joon Ching Juan, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul
Publikováno v:
Sensors, Vol 22, Iss 23, p 9358 (2022)
Recently, there has been increasing interest in electrochemical printed sensors for a wide range of applications such as biomedical, pharmaceutical, food safety, and environmental fields. A major challenge is to obtain selective, sensitive, and relia
Externí odkaz:
https://doaj.org/article/0d57ad7374a2484591054d3de0264295
Autor:
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul
Publikováno v:
Crystals, Vol 12, Iss 11, p 1581 (2022)
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent mate
Externí odkaz:
https://doaj.org/article/1eace3c75b9b4de7b69474a36c914177
Autor:
Khairul Mohd Arshad, Muhamad Mat Noor, Asrulnizam Abd Manaf, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul
Publikováno v:
Micromachines, Vol 13, Iss 9, p 1513 (2022)
Face recognition is one of the most sophisticated disciplines of biometric systems. The use of VCSEL in automotive applications is one of the most recent advances. The existing VCSEL package with a diffuser on top of a lens intended for automotive ap
Externí odkaz:
https://doaj.org/article/891791bd7acd479eb98f39f57820913a
Autor:
Shaili Falina, Mohd Syamsul, Nuha Abd Rhaffor, Sofiyah Sal Hamid, Khairu Anuar Mohamed Zain, Asrulnizam Abd Manaf, Hiroshi Kawarada
Publikováno v:
Biosensors, Vol 11, Iss 12, p 478 (2021)
Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and cont
Externí odkaz:
https://doaj.org/article/a126be12be7c44ef82ca4ae96809fdf2
Autor:
Mohamed Fauzi Packeer Mohamed, Mohamad Faiz Mohamed Omar, Muhammad Firdaus Akbar Jalaludin Khan, Nor Azlin Ghazali, Mohd Hendra Hairi, Shaili Falina, Mohd Syamsul Nasyriq Samsol Baharin
Publikováno v:
Micromachines, Vol 12, Iss 12, p 1497 (2021)
Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-fr
Externí odkaz:
https://doaj.org/article/3bb0cdc7fe0f455e82773736bb267da2