Doping Concentrations Analysis on The Performance of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP).

Autor: Mohd Ismail Saad, Zuhir, H., Bun Seng, C., Khairul, A. M., Ghosh, Bablu, Bolong, N., Ismail, Razali

Publikováno v: International Journal of Simulation: Systems, Science & Technology; 2014, Vol. 15 Issue 2, p24-31, 8p