Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mohd Ann Amirul Zulffiqal Md. Sahar"'
Autor:
Rahil Izzati Mohd Asri, Nur Atiqah Hamzah, Mohd Anas Ahmad, Mohd Ann Amirul Zulffiqal Md. Sahar, Muhd Azi Che Seliman, Mundzir Abdullah, Zainuriah Hassan
Publikováno v:
Key Engineering Materials. 946:55-60
Indium tin oxide (ITO) thin films with 100 nm thickness were successfully deposited on soda-lime glass substrates by metal oxide electron beam evaporation at room temperature. The deposited films were post annealed via rapid thermal processor (RTP) i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8ce87a047f07e5994a537c7eb00bf8
https://doi.org/10.4028/p-auu3nm
https://doi.org/10.4028/p-auu3nm
Autor:
Nur Atiqah Hamzah, Mohd Ann Amirul Zulffiqal Md Sahar, Aik Kwan Tan, Mohd Anas Ahmad, Muhammad Fadhirul Izwan Abdul Malik, Chin Chyi Loo, Wei Sea Chang, Sha Shiong Ng
Publikováno v:
Microelectronics International. 40:8-16
Purpose This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures. Design/methodology/approach The InGaN/GaN heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ac484ae0c039cd66f5254c2b55a781c
https://doi.org/10.1108/mi-03-2022-0042
https://doi.org/10.1108/mi-03-2022-0042
Autor:
Zainuriah Hassan, Ezzah Azimah Alias, Ng Sha Shiong, N.A. Hamzah, M.A. Ahmad, Rahil Izzati Mohd Asri, Mohd Ann Amirul Zulffiqal Md Sahar
Publikováno v:
Microelectronics International. 38:127-134
Purpose The purpose of this paper is to enhance the efficiency of the LED by introducing three-step magnesium (Mg) doping profile. Attention was paid to the effects of the Mg doping concentration of the first p-GaN layer (i.e. layer close to the acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a86f99ec717d339f03f3e913b613253
https://doi.org/10.1108/mi-02-2021-0016
https://doi.org/10.1108/mi-02-2021-0016
Autor:
Mohd Ann Amirul Zulffiqal Md Sahar, Zainuriah Hassan, Rahil Izzati Mohd Asri, M.A. Ahmad, Sha Shiong Ng, N.A. Hamzah, Ezzah Azimah Alias, Way Foong Lim, Khai Shenn Lau
Publikováno v:
Microelectronics International. 38:119-126
Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f00d7acfbbbcad33356b98d8b44cca7
https://doi.org/10.1108/mi-02-2021-0017
https://doi.org/10.1108/mi-02-2021-0017
Publikováno v:
Materials Science in Semiconductor Processing. 156:107298
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8623b8c554dd321439560718e41beeae
https://doi.org/10.1016/j.mssp.2022.107298
https://doi.org/10.1016/j.mssp.2022.107298