Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mohd Anas Ahmad"'
Autor:
Yusnizam Yusuf, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, Mohd Syamsul
Publikováno v:
Crystals, Vol 13, Iss 1, p 90 (2023)
This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the
Externí odkaz:
https://doaj.org/article/ded32dfc16404d6692249f61464b62cf
Autor:
M.A. Che Seliman, N.A. Ali Yusup, Mohd Anas Ahmad, C. Ibau, Mohammad Nuzaihan, Hiroshi Kawarada, Zainuriah Hassan, Mohamed Fauzi Packeer Mohamed, Shaili Falina, Mohd Syamsul
Publikováno v:
Key Engineering Materials. 947:9-14
Gold nanoparticles (AuNPs) is known for its high surface area to volume ratio which acts as an excellent receptor when placed in between electrodes in sensors application. Microelectrodes which are bar and needle shape pointed ends with two arrangeme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0558b5f96a5a5c2eadfd700188dfe7cb
https://doi.org/10.4028/p-jzv559
https://doi.org/10.4028/p-jzv559
Autor:
Rahil Izzati Mohd Asri, Nur Atiqah Hamzah, Mohd Anas Ahmad, Mohd Ann Amirul Zulffiqal Md. Sahar, Muhd Azi Che Seliman, Mundzir Abdullah, Zainuriah Hassan
Publikováno v:
Key Engineering Materials. 946:55-60
Indium tin oxide (ITO) thin films with 100 nm thickness were successfully deposited on soda-lime glass substrates by metal oxide electron beam evaporation at room temperature. The deposited films were post annealed via rapid thermal processor (RTP) i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8ce87a047f07e5994a537c7eb00bf8
https://doi.org/10.4028/p-auu3nm
https://doi.org/10.4028/p-auu3nm
Autor:
Nur Atiqah Hamzah, Mohd Ann Amirul Zulffiqal Md Sahar, Aik Kwan Tan, Mohd Anas Ahmad, Muhammad Fadhirul Izwan Abdul Malik, Chin Chyi Loo, Wei Sea Chang, Sha Shiong Ng
Publikováno v:
Microelectronics International. 40:8-16
Purpose This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures. Design/methodology/approach The InGaN/GaN heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ac484ae0c039cd66f5254c2b55a781c
https://doi.org/10.1108/mi-03-2022-0042
https://doi.org/10.1108/mi-03-2022-0042
Autor:
Ahmad Sauffi Yusof, Sidi Ould Saad Hamady, Christyves Chevallier, Nicolas Fressengeas, Zainuriah Hassan, Sha Shiong Ng, Mohd Anas Ahmad, Way Foong Lim, Muhd Azi Che Seliman
Publikováno v:
Materials Science in Semiconductor Processing. 144:106614
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00ffc723036b510255d06890b58586b5
https://doi.org/10.1016/j.mssp.2022.106614
https://doi.org/10.1016/j.mssp.2022.106614
Autor:
Rosfariza, Radzali, Mohd, Anas Ahmad, Hassan, Zainuriah, Zainal, Norzaini, Kwong, Yam Fong, Woei, Chin Che, Yusoff, Mohd Zaki Mohd, Bakhori, Siti Khadijah Mohd, Yusof, Yushamdan
Publikováno v:
Advanced Materials Research; October 2011, Vol. 364 Issue: 1 p139-143, 5p