Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mohammed Missous"'
Publikováno v:
IEEE Electron Device Letters. 38:438-440
A GaAs-based potential well barrier (PWB) diode having a $n^{++}-i-n^{++}$ epitaxial structure has been successfully designed and demonstrated. The diode uses a GaAs potential well inserted between two intrinsic AlGaAs regions in which charges accumu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52d2bfa85ad67b99e0cb22805225372e
https://doi.org/10.1109/led.2017.2673662
https://doi.org/10.1109/led.2017.2673662
Autor:
Yasir J. Noori, Christopher Woodhead, James Sexton, Max A. Migliorato, Mohammed Missous, Ibrahim Ethem Bagci, Mohamad Adzhar Md Zawawi, N. Hulbert, Utz Roedig, Jonathan Roberts, Robert J. Young
Publikováno v:
Roberts, J, Bagci, I E, Zawawi, M A M, Sexton, J, Hulbert, N, Noori, Y J, Woodhead, C S, Missous, M, Migliorato, M A, Roedig, U & Young, R J 2016, ' Atomic-scale Authentication with Resonant Tunneling Diodes ', MRS Advances, vol. 1, no. 22, pp. 1625-1629 . https://doi.org/10.1557/adv.2016.156
The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52b7f8f35e6d4d0cef15d42f950df34c
https://www.research.manchester.ac.uk/portal/en/publications/atomicscale-authentication-with-resonant-tunneling-diodes(38576ab5-97d0-4c4b-a1a7-a62e3dc4669c).html
https://www.research.manchester.ac.uk/portal/en/publications/atomicscale-authentication-with-resonant-tunneling-diodes(38576ab5-97d0-4c4b-a1a7-a62e3dc4669c).html
Publikováno v:
International Journal of Materials Science and Applications. 7:161
A comparative study of the electron transport property and operation of the Potential Well Barrier (PWB) diode and Planar-doped Potential-well Barrier (PPB) diode has been carried out in this study. Both diodes are heterostructures in GaAs/AlGaAs sys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2f717c81e3fce23cf1d9e972a735b0
https://doi.org/10.11648/j.ijmsa.20180704.17
https://doi.org/10.11648/j.ijmsa.20180704.17
Publikováno v:
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff4df41915603183574b73ae2ed5174
https://doi.org/10.1109/asdam.2014.6998671
https://doi.org/10.1109/asdam.2014.6998671
Autor:
Ioannis Kostakis, Qiandong Zhuang, Robert J. Young, Peter J. Carrington, Abu Syed Mahajumi, Mohammed Missous, Ana M. Sanchez, Manus Hayne, Anthony Krier
Publikováno v:
Journal of Physics D: Applied Physics. 46:305104
The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski–Krastanow grown quantum rings have been studied and interpreted. Post-growth rap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20f4b36d3c0092ca760785a4e08a4cfd
https://doi.org/10.1088/0022-3727/46/30/305104
https://doi.org/10.1088/0022-3727/46/30/305104
Publikováno v:
Journal of Physics D: Applied Physics. 46:264002
This study focuses on the area of the epitaxial design, fabrication and characterization of a 1 µm gate-length InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems. The advanced epitaxial layer des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3914f5f4c7c758ad1d48ae7980fcf65
https://doi.org/10.1088/0022-3727/46/26/264002
https://doi.org/10.1088/0022-3727/46/26/264002
Autor:
John Ovey, Robert G. Harrison, Svein M. Nilsen, K. Krishnamurthi, Christopher M. Rogers, Mohammed Missous
Publikováno v:
1994 24th European Microwave Conference.
Single-barrier varactors reported earlier were limited in their power output. By using a pseudomorphic In0.52Al0.48As/AlAs/In0.52Al0.48As barrier with good current blocking characteristics and stacking three varactor layers by MBE technique, we repor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f1732dbf983d4052bef91bb0fedfa77
https://doi.org/10.1109/euma.1994.337302
https://doi.org/10.1109/euma.1994.337302
Autor:
Jonny Roberts, Ibrahim Ethem Bagci, Hulbert, N., Matthew Young, Christopher Woodhead, Yasir Jamal Noori, Lucas Mogg, Migliorato, M., Mohammed Missous, Utz Roedig, Robert Young
Publikováno v:
Lancaster University-Pure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2232325e3fd8c3741fee3d82be83409a
http://pure.lancs.ac.uk/portal/en/publications/quantum-authentication(4e0c87d4-aa95-482f-854d-be670ffd2ef6).html
http://pure.lancs.ac.uk/portal/en/publications/quantum-authentication(4e0c87d4-aa95-482f-854d-be670ffd2ef6).html
Autor:
Benjamin Astbury, Ibrahim Ethem Bagci, Thomas McGrath, Sexton, J., Mohammed Missous, Utz Roedig, Ramon Bernardo Gavito, Robert Young
Publikováno v:
Lancaster University-Pure
In this work, we design and implement a strong physical uncloneable function from an array of individual resonant tunnelling diodes that were previously described to have a unique response when challenged. The system demonstrates the exponential scal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32b69ab4a413c8b8d652ab6f03308668
https://puretest.lancaster.ac.uk/portal/en/publications/strong-pufs-from-arrays-of-resonant-tunnelling-diodes(607be1de-31b1-41c6-98b9-23b2a4977a83).html
https://puretest.lancaster.ac.uk/portal/en/publications/strong-pufs-from-arrays-of-resonant-tunnelling-diodes(607be1de-31b1-41c6-98b9-23b2a4977a83).html