Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mohammed Fakhruddin"'
Publikováno v:
2022 44th Annual EOS/ESD Symposium (EOS/ESD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1dd2b1889e2bd195ccc4b284471b66
https://doi.org/10.23919/eos/esd54763.2022.9928490
https://doi.org/10.23919/eos/esd54763.2022.9928490
Publikováno v:
ISQED
The proposed verification methodology enables designers to meet a maximum resistance specification for the well taps routing. Key strengths of the flow are: automatic identification of both well taps and VDD/VSS grid; comparison of the extracted resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bc9a218f6fa161fad0af1e41f745b3d
https://doi.org/10.1109/isqed.2018.8357297
https://doi.org/10.1109/isqed.2018.8357297
Autor:
Larry Horwitz, Michael J. Hart, Vassili Kireev, Matthew Hogan, Mohammed Fakhruddin, James Karp
Publikováno v:
MWSCAS
Custom ESD protection without increasing loading capacitance is demonstrated for transmitter (TX) and receiver (RX) pins of the Xilinx Zynq UltraScale+ Microprocessor System-on-Chip (MPSoC) transceivers. Optimized T-coil cancellation was applied at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bab67056d2c77dcf0ed70835b1117165
https://doi.org/10.1109/mwscas.2016.7869952
https://doi.org/10.1109/mwscas.2016.7869952
Autor:
Mohammed Fakhruddin, Phoumra Tan, James Karp, Rawat Mini, Vassili Kireev, Dean Tsaggaris, Michael J. Hart
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Methodology proposed that relates 200V CDM voltage specification of S20.20-2014 standard to a realistic 100–200mA CDM peak current for inter-die interfaces. Tribology is considered to be the source of charge accumulation on the bare die during 3D/2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df56eab0687b941fa75b6e2b2a822347
https://doi.org/10.1109/irps.2016.7574556
https://doi.org/10.1109/irps.2016.7574556