Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mohammed Fahem"'
Autor:
Lance Lerum, Mohammed Fahem, Osama M. Nayfeh, C. Dave Rees, Kenneth S. Simonsen, Ayax D. Ramirez
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 5, Pp 347-361 (2017)
Novel niobium heterostructure devices that integrate aluminum, hafnium, and chromium oxide are designed and constructed by sputtering and atomic layer deposition. The devices are examined for use in resistive switching (RS) memory cells. Specifically
Externí odkaz:
https://doaj.org/article/56136896c4644bb68f1c1f2e3b8d0893
Autor:
C. Dave Rees, Ayax D. Ramirez, Mohammed Fahem, Kenneth Simonsen, Lance Lerum, Osama M. Nayfeh
Publikováno v:
IEEE Journal of the Electron Devices Society. 5:347-361
Novel niobium heterostructure devices that integrate aluminum, hafnium, and chromium oxide are designed and constructed by sputtering and atomic layer deposition. The devices are examined for use in resistive switching (RS) memory cells. Specifically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc425f1099301e97e7c2e2e8794de67f
https://doi.org/10.1109/jeds.2017.2723870
https://doi.org/10.1109/jeds.2017.2723870
Autor:
T. L. Reinecke, D. K. Gaskill, Hector Romero, J. Cothern, C. Torres, Lance Lerum, Patrick C. Sims, Hunter Banks, Osama M. Nayfeh, R. Barua, B. Liu, Kenneth Simonsen, Ayax D. Ramirez, Brian Higa, M. Lasher, A. deEscobar, B. Davidson, Samuel G. Carter, Mohammed Fahem
Publikováno v:
Quantum Photonic Devices.
Defect qubits in silicon carbide are an emerging system for quantum information science and technology. It is important to passivate and protect the surface to preserve the particular defect configurations as well as to provide means to tune the opto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28c5e0d067bd405f37ec5a0fd7f3c84
https://doi.org/10.1117/12.2272774
https://doi.org/10.1117/12.2272774
Autor:
Gregory S. Kanter, D. Chao, Mohammed Fahem, Patrick C. Sims, C. D. Rees, Lance Lerum, J. Cothern, Osama M. Nayfeh, M. Tukeman, B. Lynn, Ayax D. Ramirez, B. Davidson, J. Moore, A. Upchurch, B. Liu, N. Djapic, R. Barua, Brian Higa, V. Anant, C. Torres, S. Zlatanovic, V. Dinh, S. Sharma
Publikováno v:
Quantum Photonic Devices.
Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aad68a94c522ede88b2498c6c0d3794
https://doi.org/10.1117/12.2273012
https://doi.org/10.1117/12.2273012