Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Mohammed A. Najmi"'
Autor:
Dhaifallah Almalawi, Sergei Lopatin, Paul R. Edwards, Bin Xin, Ram C. Subedi, Mohammed A. Najmi, Fatimah Alreshidi, Alessandro Genovese, Daisuke Iida, Nimer Wehbe, Boon S. Ooi, Kazuhiro Ohkawa, Robert W. Martin, Iman S. Roqan
Publikováno v:
ACS Omega, Vol 8, Iss 49, Pp 46804-46815 (2023)
Externí odkaz:
https://doaj.org/article/15c00036a4c241559745d705b5b6198c
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract We report the growth of N-polar InGaN layers on misoriented ScAlMgO4 (SAM) substrates with offset of 0.3 to 5.8° toward the m-plane. The surface of N-polar InGaN with small-offset substrates exhibited hexagonal hillocks similar to those com
Externí odkaz:
https://doaj.org/article/a8a7dad6e58245c8a72d15544a55e69b
Autor:
Pavel Kirilenko, Mohammed A. Najmi, Bei Ma, Artem Shushanian, Martin Velazquez-Rizo, Daisuke Iida, Kazuhiro Ohkawa
Publikováno v:
AIP Advances, Vol 13, Iss 4, Pp 045011-045011-6 (2023)
We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any lo
Externí odkaz:
https://doaj.org/article/1243d424183f4a7ea76bd0975029adf0
Autor:
Daisuke Iida, Pavel Kirilenko, Martin Velazquez-Rizo, Zhe Zhuang, Mohammed A. Najmi, Kazuhiro Ohkawa
Publikováno v:
AIP Advances, Vol 12, Iss 6, Pp 065125-065125-6 (2022)
Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibi
Externí odkaz:
https://doaj.org/article/b0ffdf9596ef484c8cace391f4e43659
Autor:
Tomoya Nakayama, Kotaro Ito, Bei Ma, Daisuke Iida, Mohammed A. Najmi, Kazuhiro Ohkawa, Yoshihiro Ishitani
Publikováno v:
Materials Science in Semiconductor Processing. 150:106905
Autor:
Aparna Aggarwal, Shankargouda Patil, Naif Mohammed Ahmed Najmi, Mohammed E. Sayed, Shilpa Bhandi, Amjad Hussain Asiri Halawi, Saurabh Jain, Walaa Magdy Ahmed
Publikováno v:
Coatings, Vol 11, Iss 1177, p 1177 (2021)
The authors have found three typing errors in their published paper and would like to make corrections in this paper [...]
Autor:
Mohammed A. Najmi, Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Kazuhiro Ohkawa, Martin Velazquez-Rizo
Publikováno v:
AIP Advances. 12:065125
Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibi
Publikováno v:
Applied Physics Express. 15:065501
We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded
Autor:
Zhe Zhuang, Mohammed A. Najmi, Martin Velazquez-Rizo, Kazuhiro Ohkawa, Daisuke Iida, Pavel Kirilenko
Publikováno v:
Gallium Nitride Materials and Devices XVI.
The LEDs were obtained that the peak emission wavelength and FWHM were 665 nm and 67 nm at 20 mA, respectively. It exhibited a large blueshift of the EL peak wavelength from 691 nm at 5 mA to 631 nm at 100 mA. In this range, the blue-shifted value wa
Autor:
Martin Velazquez-Rizo, Daisuke Iida, Kazuhiro Ohkawa, Mohammed A. Najmi, Pavel Kirilenko, Zhe Zhuang
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We obtained the EL intensity enhancement by a factor of 1.3 with increasing of n-GaN thickness from 2 to 8 µm. We achieved a light output, forward voltage, FWHM and external quantum efficiency of 0.64 mW, 3.3 V, 59 nm, and 1.6% at 20 mA, respectivel