Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Mohammad-Masum Billah"'
Autor:
Sunaina Priyadarshi, Abidur Rahaman, Mohammad Masum Billah, Sabiqun Nahar, Md. Redowan Mahmud Arnob, Jin Jang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 587-593 (2024)
This article intends to use a low-temperature poly-Si oxide (LTPO) level-down-shifter (LDS) to translate voltage signals with different amplitudes operating at various frequencies. The LTPO LDS is made of p-type low-temperature poly-Si and n-type a-I
Externí odkaz:
https://doaj.org/article/fb2941ba9e5f49d489a9986e06338bee
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 4, Pp n/a-n/a (2024)
Amorphous tin oxide (a‐SnOx) is a potential transparent oxide semiconductor candidate for future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach ≈100 cm2 Vs−1, a mobility higher than other multiple cation
Externí odkaz:
https://doaj.org/article/5eec9573d56441bfb56cac1896f20312
Publikováno v:
Journal of Marine Science and Engineering, Vol 11, Iss 7, p 1295 (2023)
On 25 July 2021, the AUV of the Marine Science and Technology Research Center was lost under the sea due to a fracture of the wire rope when it was performing a mission offshore of China. A model is presented in the paper for predicting the trajector
Externí odkaz:
https://doaj.org/article/745236c83c424cea80533b1e4ce3ca82
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract Radiating amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) with deep ultraviolet light (λ = 175 nm) is found to induce rigid negative threshold-voltage shift, as well as a subthreshold hump and an increase in subthreshold-vo
Externí odkaz:
https://doaj.org/article/e4ca094ea88f4299b3a88c484b2fe35d
Publikováno v:
Journal of Marine Science and Engineering, Vol 10, Iss 10, p 1529 (2022)
Data-driven technologies and automated identification systems (AISs) provide unprecedented opportunities for maritime surveillance. As part of enhancing maritime situational awareness and safety, in this paper, we address the issue of predicting a sh
Externí odkaz:
https://doaj.org/article/96ee1d3e81de42898eb9e630d18ba8a0
Autor:
Mohammad Masum Billah, Abu Bakar Siddik, Jung Bae Kim, Lai Zhao, Soo Young Choi, Dong Kil Yim, Jin Jang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 503-511 (2019)
We studied the impact of grain boundary (GB) protrusion on the electrical properties of low temperature polycrystalline silicon thin film transistors. The analysis of atomic force microscopy and transmission electron microscopy images indicate the gr
Externí odkaz:
https://doaj.org/article/e7a65bb2928e4a5d8f1ad8ea26a50e2f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 801-807 (2019)
We report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching.
Externí odkaz:
https://doaj.org/article/a0ffccc94b2d4153b2cc3881fb22edb0
Autor:
Chanju Park, Munsu Choi, Suhui Lee, Hyunho Kim, Taeheon Lee, Mohammad Masum Billah, Byunglib Jung, Jin Jang
Publikováno v:
Nanomaterials, Vol 12, Iss 13, p 2127 (2022)
A piezoresistive sensor is an essential component of wearable electronics that can detect resistance changes when pressure is applied. In general, microstructures of sensing layers have been adopted as an effective approach to enhance piezoresistive
Externí odkaz:
https://doaj.org/article/9adc89081a1b428cbe0f8f025ddda42e
Publikováno v:
IEEE Electron Device Letters. 44:428-431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::247d0cc3c531e6a7d2ee7fd8eb03e34d
https://doi.org/10.1109/led.2023.3235979
https://doi.org/10.1109/led.2023.3235979
Autor:
Sadia Sayed Urmi, Mohammad Masum Billah, Sunaina Priyadarshi, Jinbaek Bae, Byunglib Jung, Suhui Lee, Keunwoo Kim, Jiyeong Shin, Sangun Choi, Junhyung Lim, Taewook Kang, Changhee Lee, Jin Jang
Publikováno v:
IEEE Electron Device Letters. 44:80-83
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115ba6d8fdc3c5eca0d517e28cbabfeb
https://doi.org/10.1109/led.2022.3225863
https://doi.org/10.1109/led.2022.3225863