Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Mohammad Zamani-Alavijeh"'
Autor:
Emmanuel Wangila, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 14, Iss 8, p 724 (2024)
We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a pr
Externí odkaz:
https://doaj.org/article/a1ca66d1e9c142f5b570aa73450f3e3f
Autor:
Calbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 909 (2024)
The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecula
Externí odkaz:
https://doaj.org/article/09d29963985a4887bfcc8786ce77e394
Autor:
Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Publikováno v:
Crystals, Vol 14, Iss 5, p 414 (2024)
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were inves
Externí odkaz:
https://doaj.org/article/6aaf73730ff746378b763ebdd942b523
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-8 (2022)
Abstract Piezoresponse force microscopy is used to study the velocity of the polarization domain wall in ultrathin ferroelectric barium titanate (BTO) films grown on strontium titanate (STO) substrates by molecular beam epitaxy. The electric field du
Externí odkaz:
https://doaj.org/article/e4589902f9f64e9886a10c5dffad76c1
Autor:
Emmanuel Wangila, Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia de Oliveira, Samir Saha, Subhashis Das, Nirosh Eldose, Chen Li, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 13, Iss 11, p 1557 (2023)
Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques.
Externí odkaz:
https://doaj.org/article/83d97a843ebc47b791ad56660221ca9e
Autor:
Mirsaeid Sarollahi, Mohammad Zamani-Alavijeh, Manal A. Aldawsari, Rohith Allaparthi, Md Helal Uddin Maruf, Malak Refaei, Reem Alhelais, Yuriy I. Mazur, Morgan E. Ware
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
The temperature dependence of Λ-graded InGaN solar cells is studied through simulation using nextnano software. Λ-Graded structures have been designed by increasing and then decreasing the indium composition in epitaxial InGaN layers. Due to polari
Externí odkaz:
https://doaj.org/article/0dc73e4de1794e20b3e5b2e55ae1a9f9
Autor:
Timothy A. Morgan, Justin Rudie, Mohammad Zamani-Alavijeh, Andrian V. Kuchuk, Nazar Orishchin, Fikadu Alema, Andrei Osinsky, Robert Sleezer, Gregory Salamo, Morgan E. Ware
Publikováno v:
ACS Applied Materials & Interfaces. 14:33944-33951
Autor:
Mirsaeid Sarollahi, Mohammad Zamani Alavijeh, Manal A. Aldawsari, Rohith Allaparthi, Reem Alhelais, Malak A. Refaei, Md. Helal Uddin Maruf, Morgan E. Ware
Publikováno v:
Journal of Photonics for Energy. 12
Publikováno v:
Nanoscale research letters. 17(1)
Piezoresponse force microscopy is used to study the velocity of the polarization domain wall in ultrathin ferroelectric barium titanate (BTO) films grown on strontium titanate (STO) substrates by molecular beam epitaxy. The electric field due to the
Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
Autor:
Oluwatobi Olorunsola, Hryhorii Stanchu, Solomon Ojo, Emmanuel Wangila, Abdulla Said, Mohammad Zamani-Alavijeh, Gregory Salamo, Shui-Qing Yu
Publikováno v:
Journal of Crystal Growth. 588:126675