Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mohammad Tauquir Alam Shamim Shaikh"'
Autor:
Tan Hoang Vu Nguyen, Mohammad Tauquir Alam Shamim Shaikh, Ho Jung Jeon, Thi Thanh Huong Vu, Chowdam Venkata Prasad, Madani Labed, Sangmo Kim, You Seung Rim
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract Biocompatible and biodegradable resistive random‐access memory devices using Mg/agarose/Al2O3/Mg‐based organic/inorganic structures are reported, showing nonvolatile bipolar resistive switching memory behavior. The organic/inorganic‐ba
Externí odkaz:
https://doaj.org/article/a4c7098b84aa43dbbb35619c12c4af25
Autor:
Mohammad Tauquir Alam Shamim Shaikh, Tan Hoang Vu Nguyen, Ho Jung Jeon, Chowdam Venkata Prasad, Kyong Jae Kim, Eun Seo Jo, Sangmo Kim, You Seung Rim
Publikováno v:
Advanced Science, Vol 11, Iss 4, Pp n/a-n/a (2024)
Abstract The electronic device, with its biocompatibility, biodegradability, and ease of fabrication process, shows great potential to embed into health monitoring and hardware data security systems. Herein, polyvinylpyrrolidone (PVP) biopolymer is p
Externí odkaz:
https://doaj.org/article/553ec6a3144d4f4c80a3e25b843d1a31
Autor:
Chowdam Venkata Prasad, Madani Labed, Mohammad Tauquir Alam Shamim Shaikh, Ji Young Min, Tan Hoang Vu Nguyen, Wonjin Song, Jang Hyeok Park, Kyong Jae Kim, Sangmo Kim, Sinsu Kyoung, Nouredine Sengouga, You Seung Rim
Publikováno v:
Materials Today Advances, Vol 19, Iss , Pp 100402- (2023)
In this work, by controlling the oxygen flow rate (OFR) (from 0% to 30%), we suggest using a p-type copper aluminum oxide (p-CuAlO2) interlayer to enhance the high breakdown and low leakage current for β-Ga2O3-based power device applications. Result
Externí odkaz:
https://doaj.org/article/2b6a7176e8ed4376a4a1fc90c6e0efe7
Autor:
Chowdam Venkata Prasad, Madani Labed, Mohammad Tauquir Alam Shamim Shaikh, Ji Young Min, Tan Hoang Vu Nguyen, Wonjin Song, Kyong Jae Kim, You Seung Rim
Publikováno v:
Materials Today Physics. 35:101095