Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Mohammad Suja"'
Autor:
Mohammad Suja, Sunayna Binte Bashar, Bishwajit Debnath, Longxing Su, Wenhao Shi, Roger Lake, Jianlin Liu
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achi
Externí odkaz:
https://doaj.org/article/829315251b2d49d0b0b8b8c5f91b0b33
Autor:
Jianlin Liu, Sunayna Binte Bashar, Longxing Su, Mohammad Suja, Roger K. Lake, Bishwajit Debnath
Publikováno v:
Applied Surface Science. 439:525-532
Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e0a9ec24214661b0afbbc281b9d8e01
https://doi.org/10.1016/j.apsusc.2018.01.075
https://doi.org/10.1016/j.apsusc.2018.01.075
Publikováno v:
Advanced Optical Materials. 4:2063-2067
Au/ZnO microwire Schottky diodes are fabricated. The devices exhibit typical Schottky diode I–V behavior with a turn-on voltage of about 0.72 V. The hexagonal ZnO microwires act as whispering gallery mode (WGM) lasing microcavities. Under forward b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa42f7da39e92507da5479e9e4e96ee7
https://doi.org/10.1002/adom.201600513
https://doi.org/10.1002/adom.201600513
Publikováno v:
ACS Applied Materials & Interfaces. 7:8894-8899
Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b4ed81e60ffee6fbb5152f397667034
https://doi.org/10.1021/acsami.5b01564
https://doi.org/10.1021/acsami.5b01564
Autor:
Mingguang Chen, Jianlin Liu, Mikhail E. Itkis, Elena Bekyarova, Mohammad Suja, Guanghui Li, Robert C. Haddon
Publikováno v:
ACS applied materialsinterfaces. 9(42)
Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bec510b74c9837f62240f78c65b6ffd8
https://pubmed.ncbi.nlm.nih.gov/28948759
https://pubmed.ncbi.nlm.nih.gov/28948759
Publikováno v:
Scientific Reports
Two-dimensional (2D) hexagonal boron nitride (h-BN), which has a similar honeycomb lattice structure to graphene, is promising as a dielectric material for a wide variety of potential applications based on 2D materials. Synthesis of high-quality, lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::449906500ef6471d11cc8451b29da1f9
http://europepmc.org/articles/PMC5322373
http://europepmc.org/articles/PMC5322373
Publikováno v:
Conference on Lasers and Electro-Optics.
Metal-semiconductor-metal devices were fabricated by utilizing MgZnO thin films to demonstrate random lasing in the deep ultraviolet wavelength range tuned by Mg content in the film. Room temperature lasing is realized in the wavelength range down to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cdf2bd3c2d35a6862136389aa63e987
https://doi.org/10.1364/cleo_si.2017.sth1c.1
https://doi.org/10.1364/cleo_si.2017.sth1c.1
Publikováno v:
2016 IEEE Photonics Conference (IPC).
A single-phase wurtzite Mg 0.3 Zn 0.7 O thin film was grown on c-sapphire substrate. Deep ultraviolet random lasing with lasing peaks distributed between 320 nm and 340 nm was achieved from Mg 0.3 Zn 0.7 O based metal-semiconductor-metal devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be061e363b606aa3e0b9452ed5056995
https://doi.org/10.1109/ipcon.2016.7830991
https://doi.org/10.1109/ipcon.2016.7830991
Publikováno v:
2016 IEEE Photonics Conference (IPC).
An electrically pumped Au-ZnO nanowire based Schottky junction on top of a 10-period SiU2/SiNx distributed Bragg reflector (DBR) has been fabricated for the first time. In comparison with a structure having no DBR, this laser demonstrates low thresho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10b29271ba95ee66541ac71bb935e653
https://doi.org/10.1109/ipcon.2016.7831216
https://doi.org/10.1109/ipcon.2016.7831216
Publikováno v:
Conference on Lasers and Electro-Optics.
Plasmonic enhancement in random lasing is realized from ZnO metal-semiconductor-metal devices. The output power of random laser is increased while lasing threshold is decreased after Ag nanoparticles are incorporated on ZnO film due to plasmonic coup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca250a63a205f77f7f0ed5933546716a
https://doi.org/10.1364/cleo_si.2016.sw1m.5
https://doi.org/10.1364/cleo_si.2016.sw1m.5