Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Mohammad Shawkat Zaman"'
Publikováno v:
IEEE Transactions on Power Electronics. 38:6212-6223
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b41d7f9d5535787a6310627194f1cf85
https://doi.org/10.1109/tpel.2023.3237622
https://doi.org/10.1109/tpel.2023.3237622
Autor:
Samantha Kadee Murray, Wan Lin Jiang, Mohammad Shawkat Zaman, Herbert De Vleeschouwer, Peter Moens, Jaume Roig, Olivier Trescases
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:7150-7161
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b0f48525777a78de70929ff3a75e0da
https://doi.org/10.1109/jestpe.2022.3163646
https://doi.org/10.1109/jestpe.2022.3163646
Autor:
Wan Lin Jiang, Samantha Kadee Murray, Mohammad Shawkat Zaman, Herbert De Vleeschouwer, Peter Moens, Jaume Roig, Olivier Trescases
Publikováno v:
IEEE Transactions on Power Electronics. 37:9314-9324
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::843d74bfa36648ae1a75edd881f33518
https://doi.org/10.1109/tpel.2022.3158655
https://doi.org/10.1109/tpel.2022.3158655
Autor:
Seyed Amir Assadi, Omri Tayyara, Joshua Palumbo, Andrew Chen, Mohammad Shawkat Zaman, Carlos Da Silva, Sanjeev Chandra, Cristina H. Amon, Olivier Trescases
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dcf4c614d2ed2f0f8d2b338e3acc7bc
https://doi.org/10.1109/apec43580.2023.10131627
https://doi.org/10.1109/apec43580.2023.10131627
Autor:
Andrew Michalak, Miad Nasr, Cristina H. Amon, Olivier Trescases, Mohammad Shawkat Zaman, James K. Mills, Carlos Da Silva
Publikováno v:
IEEE Transactions on Power Electronics. 36:12769-12780
Meeting the stringent performance requirements for power electronic converters in electric vehicles requires an integrated approach for optimizing the inherently coupled electrical and thermal performances of converter systems. This article presents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76ac16cea585a7f7d7798a0dfd544b0
https://doi.org/10.1109/tpel.2021.3076532
https://doi.org/10.1109/tpel.2021.3076532
Autor:
Mohammad Shawkat Zaman, Ramgopal Varma Ramaraju, Seyed Amir Assadi, Sanjeev Chandra, Olivier Trescases
Publikováno v:
2022 IEEE 23rd Workshop on Control and Modeling for Power Electronics (COMPEL).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb8706076b11a74a8c6504b280e6ea2e
https://doi.org/10.1109/compel53829.2022.9830031
https://doi.org/10.1109/compel53829.2022.9830031
Autor:
Miad Nasr, Hirokazu Matsumoto, Olivier Trescases, Mohammad Shawkat Zaman, Seyed Amir Assadi, Mazhar Moshirvaziri
Publikováno v:
IEEE Transactions on Power Electronics. 35:4376-4387
This article presents a transformer saturation prevention algorithm (SPA) targeting dual-active-bridge (DAB) dc–dc converters utilized in bidirectional, two-stage electric vehicle (EV) on-board battery chargers. Saturation prevention is achieved by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa48a5b22337813a2d56a390adb4a39
https://doi.org/10.1109/tpel.2019.2939301
https://doi.org/10.1109/tpel.2019.2939301
Autor:
Wan Lin Jiang, Samantha K. Murray, Herbert De Vleeschouwer, Olivier Trescases, Mohammad Shawkat Zaman, Jaume Roig, Peter Moens
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents key building blocks of a monolithic GaN half-bridge solution: 1) a binary-weighted digitally-controlled segmented gate-driver, offering slew-rate control; 2) a high-voltage floating level-shifter with glitch prevention; and 3) a m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de764afb7538ca2ed76bbf737807a50e
https://doi.org/10.1109/apec42165.2021.9487430
https://doi.org/10.1109/apec42165.2021.9487430
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper reviews monolithic GaN integration for power ICs, focusing on current technological capabilities. We highlight key opportunities for integrating low-voltage circuits alongside power devices to support converter operation. Simulations and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cca312f91235290f393dbc907c34ca9b
https://doi.org/10.1109/iedm13553.2020.9371918
https://doi.org/10.1109/iedm13553.2020.9371918
Autor:
Peter Moens, Samantha K. Murray, H. De Vleeschouwer, Mohammad Shawkat Zaman, Jaume Roig, Olivier Trescases, W. L. Jiang
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This work presents an integrated GaN senseHEMT structure and segmented gate-driver implemented using ON Semiconductor’s 650-V mixed-signal GaN-on-Si process. The senseHEMT element with 2500:1 sensing ratio is embedded within the 650-V power device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a35bf8aacb842ef1caac681982f72e
https://doi.org/10.1109/ispsd46842.2020.9170100
https://doi.org/10.1109/ispsd46842.2020.9170100