Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mohammad Mahdi Khatami"'
Publikováno v:
Physical Review B. 104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f670dd3620084d118acc6ed2814ee2b6
https://doi.org/10.1103/physrevb.104.235424
https://doi.org/10.1103/physrevb.104.235424
Autor:
Maarten L. Van de Put, Mohammad Kazem Moravvej-Farshi, William G. Vandenberghe, Gautam Gaddemane, Mohammad Mahdi Khatami
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 32(49)
Hydrogenation and fluorination have been presented as two possible methods to open a bandgap in graphene, required for field-effect transistor applications. In this work, we present a detailed study of the phonon-limited mobility of electrons and hol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a032082f64f6e8af297ce458a60287d4
https://pubmed.ncbi.nlm.nih.gov/32955019
https://pubmed.ncbi.nlm.nih.gov/32955019
Autor:
Mohammad Mahdi Khatami, Mahdi Pourfath, Gautam Gaddemane, Massimo V. Fischetti, Maarten L. Van de Put, William G. Vandenberghe, Mohammad Kazem Moravvej-Farshi
Publikováno v:
DRC
Silicane, hydrogen-terminated monolayer hexagonal silicon, as illustrated in Fig. 1, is a two-dimensional (2D) material and a candidate for future nanoscale electronic devices. To assess its promise, we conduct a theoretical study of the electron and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720e078bd0b62bd68e280cced593aaac
https://doi.org/10.1109/drc46940.2019.9046445
https://doi.org/10.1109/drc46940.2019.9046445
Publikováno v:
Superlattices and Microstructures. 85:82-91
Formation of a parasitic channel in biaxially strained Si channel p-MOSFET, degrades performance of the device. In this paper the effect of SiGe (virtual substrate) doping on formation of parasitic channel and high frequency characteristics of the st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e5c7f9acae28d92be9a71429e37cab
https://doi.org/10.1016/j.spmi.2015.05.012
https://doi.org/10.1016/j.spmi.2015.05.012
Autor:
Massimo V. Fischetti, Gautam Gaddemane, Mohammad Mahdi Khatami, M. L. Van de Put, P. D. Yoder
Publikováno v:
Applied Physics Letters. 114:222104
Theoretical studies of heat generation and diffusion in Si devices generally assume that hot electrons in Si lose their energy mainly to optical phonons. Here, we briefly review the history of this assumption, and using full-band Monte Carlo simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f7fa84287f3c2b319c2a8f0bc6c9418
https://doi.org/10.1063/1.5099914
https://doi.org/10.1063/1.5099914
Publikováno v:
2015 23rd Iranian Conference on Electrical Engineering.
Typical CMOS inverters suffer from current mismatch of PMOS and NMOS transistors which causes asymmetric behavior of the static CMOS inverter. This mismatch is a result of non-equality of several parameters including mobility and threshold voltage of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad8d4dcdb35ff57eada9ae9b9dd201b6
https://doi.org/10.1109/iraniancee.2015.7146413
https://doi.org/10.1109/iraniancee.2015.7146413