Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Mohammad Javad Sharifi"'
Publikováno v:
Polyolefins Journal, Vol 11, Iss 4, Pp 219-233 (2024)
The performance of the catalyst system [chromium(III)/pyrrole/co-catalyst/halide] on the trimerization of ethylene has been studied using the combined experimental and response surface method (RSM). The chromium(III) tris(2-ethylhexanoate) was synthe
Externí odkaz:
https://doaj.org/article/e09ad8f767f94038941117f6c1e35739
Publikováno v:
ETRI Journal, Vol 40, Iss 6, Pp 794-801 (2018)
This paper proposes a novel graphene‐based optical microelectromechanical systems MEMS accelerometer that is dependent on the intensity modulation and optical properties of graphene. The designed sensing system includes a multilayer graphene finger
Externí odkaz:
https://doaj.org/article/2867ab0c143a4afcba7cdfbc1778c341
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 5, Iss 1, Pp 1569-1574 (2014)
The performance of field effect transistors comprised of a zigzag graphene nanoribbon that is symmetrically doped with boron nitride (BN) as a channel material, is numerically studied for the first time. The device merit for digital applications is i
Externí odkaz:
https://doaj.org/article/8f2cd93bf41f442f9e62f7e68a5a0396
Publikováno v:
Journal of Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b2d8ecf804cfa83930a73fbb9b2e31
https://doi.org/10.1007/s11664-023-10472-0
https://doi.org/10.1007/s11664-023-10472-0
Autor:
Pejman Ghasemi, Mohammad Javad Sharifi
Publikováno v:
ACS Applied Materials & Interfaces. 13:53067-53072
Here, we report on the fabrication of an optoelectronic memcapacitor (memory capacitor) by manipulation of ferroelectric properties through the ferroelectric-semiconductor interface based on a ZnO/PZT (Pb1.1(Zr0.52Ti0.48)O3) capacitor. A ZnO layer wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9d6204933192f6d74894031d751c824
https://doi.org/10.1021/acsami.1c14528
https://doi.org/10.1021/acsami.1c14528
Publikováno v:
IEEE Transactions on Electron Devices. 68:5250-5256
In the current research, for the first time, Nano-scale finger gate vacuum channel field emission transistor (FGVFET) scaling down and its limitations considering electrical characteristics are studied. The FGVFET with different cathode electrode mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e879bdff9c6d6d288672ad2436f9c55
https://doi.org/10.1109/ted.2021.3100013
https://doi.org/10.1109/ted.2021.3100013
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 147:4113-4118
In this work, the acoustic absorption performance of polyurethane (PU) elastomer consisted of different molecular masses of polypropylene glycol (PPG), and a PU composite sample was made by adding multi-wall carbon nanotubes (MWCNT) was studied. Usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32fa67a33575b996430285cb34ff4c30
https://doi.org/10.1007/s10973-021-10754-x
https://doi.org/10.1007/s10973-021-10754-x
Publikováno v:
Cellulose Chemistry and Technology. 55:185-205
In recent decades, the increasing demand for chemicals has led to producing large volumes of wastewater streams, which should be treated before their release into the environment. Chitosan, a marine polysaccharide derived from chitin, has recently at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d0fe08d90b9df86b90d21aa7732942
https://doi.org/10.35812/cellulosechemtechnol.2021.55.20
https://doi.org/10.35812/cellulosechemtechnol.2021.55.20
Autor:
Mohammad Javad Sharifi, Mehdi Ahmadian
Publikováno v:
Journal of Computational Electronics. 20:195-208
In this paper, a new method for implementing all two-input logic gates on an identical single-stage structure is proposed. We have used unique characteristics of single-electron transistors, which have periodic output–input relation, to design the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bca6c309f0fe4e686b689b84d61eaca
https://doi.org/10.1007/s10825-020-01590-7
https://doi.org/10.1007/s10825-020-01590-7
Publikováno v:
Journal of Computational Electronics. 19:263-270
A nanofinger gate vacuum field-emission transistor with a vertical channel (FGVFET) is proposed herein. The reduction of the gate leakage current is investigated to obtain an optimum structure. The proposed three-terminal metal–insulator–metal de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cb1a81b2620446c9f6f1744c9571438
https://doi.org/10.1007/s10825-020-01448-y
https://doi.org/10.1007/s10825-020-01448-y