Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Mohammad Javad Asadi"'
Publikováno v:
Majallah-i Dānishgāh-i ’Ulūm-i Pizishkī-i Shahīd Ṣadūqī Yazd, Vol 28, Iss 9, Pp 3056-3066 (2020)
Introduction: In neonatal period, brain magnetic resonance imaging (MRI) is the best neuroimaging to find etiology of seizure. The aim of this study was to evaluate brain MRI findings of neonates with clinical seizure and its effect on diagnostic and
Externí odkaz:
https://doaj.org/article/cdb3c48c8e7c461aa468d9476348d5dc
Autor:
Abdolhamid Amouei, Mojtaba Babaei-Zarch, Fatemeh Ehsani, Seyed Mostafa Tabataei, Mohammad Javad Asadi
Publikováno v:
Case Reports in Clinical Practice, Vol 2, Iss 2 (2017)
Ventriculoperitoneal (VP) shunt placement is the most common procedure used in the treatment of hydrocephalus. However, it has been associated with several complications. Herein, we report penetration of VP shunt into the transverse colon and anal ex
Externí odkaz:
https://doaj.org/article/254363216dbf4fc684736a2ee7789115
Autor:
Wenwen Zhao, Mohammad Javad Asadi, Lei Li, Reet Chaudhuri, Kazuki Nomoto, Huili Grace Xing, James C. M. Hwang, Debdeep Jena
Publikováno v:
IEEE Electron Device Letters. 44:903-906
Autor:
Lei Li, Steve Reyes, Mohammad Javad Asadi, Debdeep Jena, Huili Grace Xing, Patrick Fay, James C. M. Hwang
Publikováno v:
2022 99th ARFTG Microwave Measurement Conference (ARFTG).
Publikováno v:
Majallah-i Dānishgāh-i ’Ulūm-i Pizishkī-i Shahīd Ṣadūqī Yazd, Vol 28, Iss 9, Pp 3056-3066 (2020)
Introduction: In neonatal period, brain magnetic resonance imaging (MRI) is the best neuroimaging to find etiology of seizure. The aim of this study was to evaluate brain MRI findings of neonates with clinical seizure and its effect on diagnostic and
Autor:
Chun-Hsiung Tsai, Chandrashekhar P. Savant, Mohammad Javad Asadi, Yu-Ming Lin, Ivan Santos, Yu-Hsiang Hsu, Jeffrey Kowalski, Lourdes Pelaz, Wei-Yen Woon, Chih-Kung Lee, James C. M. Hwang
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
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Producción Científica
The relentless scaling of semiconductor devices pushes the doping level far above the equilibrium solubility, yet the doped material must be sufficiently stable for subsequent device fabrication and operation. For example
The relentless scaling of semiconductor devices pushes the doping level far above the equilibrium solubility, yet the doped material must be sufficiently stable for subsequent device fabrication and operation. For example
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2e0483f1bb0702ed3015510e9b202f4
https://uvadoc.uva.es/handle/10324/54389
https://uvadoc.uva.es/handle/10324/54389
Autor:
Wenwen Zhao, Lei Li, Huili Grace Xing, James C. M. Hwang, Debdeep Jena, Kazuki Nomoto, Patrick Fay, Mohammad Javad Asadi
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
Substrate-integrated waveguides (SIWs) of different geometry are designed, fabricated, and measured on a SiC wafer, along with SIW-based resonators, SIW-based filters, grounded coplanar waveguides (GCPWs), GCPW-SIW transitions, and calibration struct
Autor:
Derek Scarbrough, Renfeng Jin, James C. M. Hwang, Charles L. Goldsmith, Mohammad Javad Asadi, Guanghai Ding
Publikováno v:
Journal of Microelectromechanical Systems. 28:910-918
A closed-loop capacitance sensing and control mixed-signal CMOS circuit with a dedicated sensor electrode and a proportional-integral controller was designed to have a sensitivity of 1 fF, a settling time of $200~\mu \text{s}$ , and a voltage capacit
Autor:
Wenwen Zhao, Mohammad Javad Asadi, Lei Li, Reet Chaudhuri, Kazuki Nomoto, Huili Grace Xing, James C. M. Hwang, Debdeep Jena
Publikováno v:
Journal of Applied Physics. 132:024503
Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at 9.2 GHz in the X-band (8–12 GHz) of the microwave spectrum. The resona
Autor:
Debdeep Jena, Ved Gund, Joseph Casamento, Hyunjea Lee, Benyamin Davaji, Amit Lal, Mohammad Javad Asadi, Huili Grace Xing
Publikováno v:
2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF).
This paper reports the temperature-dependent ferroelectric properties of sputtered ferroelectric Al 0.70 Sc 0.30 N. The coercive field is experimentally demonstrated to decrease by 1.5 MV/cm in 300 nm films in the temperature range of 20– 193 0C, c