Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Mohammad Bavir"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 974-980 (2024)
In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing
Externí odkaz:
https://doaj.org/article/9574715b98b946b9851ad0a4a394be3b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 334-340 (2022)
In this paper, after calibrating the models and parameters used in the simulations based on experimental data, by using the opposite doping in the channel and between the gates in an asymmetric double-gate junctionless (JL) transistor with the 3nm ga
Externí odkaz:
https://doaj.org/article/fc08317ff33e4d73aaf9da6510e8af28
Autor:
Maryam Shirkavand, Mohammad Bavir, Ali Fattah, Hamid Reza Alaei, Mohammad Hossein Tayarani Najaran
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 3, Iss 1, Pp 79-92 (2018)
In a dye-sensitized solar cell (DSSC), the amount of light absorption dependson the design of the pigments, which determines the strength of light absorption and theoptical range of the cell. In this paper, we have constructed and studied two fairly
Externí odkaz:
https://doaj.org/article/9b283b9fe5fa4e79aed2d37674cca41b
Publikováno v:
Journal of Electronic Materials. 50:2605-2617
This study investigated the position of electrons and holes in the ON and OFF states of double-gate junctionless transistors, and then three structures were proposed to create an electron-filled region exposing the drain-side inside the channel to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc6e0f22b6ff6a607f9f4836b90c928
https://doi.org/10.1007/s11664-021-08801-2
https://doi.org/10.1007/s11664-021-08801-2
Publikováno v:
Silicon. 12:1593-1602
This study simulated the structure of a Junctionless (JL) Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with symmetrical Side Gates (SG) and investigated its performance in both presence and absence of side gates by taki
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d48f8d3dfa009b61097f216ff3f31b9a
https://doi.org/10.1007/s12633-019-00258-7
https://doi.org/10.1007/s12633-019-00258-7
Publikováno v:
Optical and Quantum Electronics. 53
In this study, electrochemical impedance spectroscopy of two types of photoanodes made up of TiO2 and graphene–TiO2 (with 6 wt% of graphene) composite are investigated in the dye-sensitized solar cells. In the first experiment, a 7-μm thickness of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa9e5d00d83821e9ceb937e350a61199
https://doi.org/10.1007/s11082-021-02859-2
https://doi.org/10.1007/s11082-021-02859-2
Publikováno v:
Optical and Quantum Electronics. 52
This study investigated the performance of graphene/silicon Schottky junction solar cells and presented two structures based on graphene diffraction gratings to significantly enhance the efficiency of the cells. Rectangular and staircase graphene gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17b6c9073633cea517cabb1051c748f6
https://doi.org/10.1007/s11082-020-02533-z
https://doi.org/10.1007/s11082-020-02533-z
Autor:
Mohammad Bavir, Ali Fattah
Publikováno v:
Optical and Quantum Electronics. 48
Recently, dye-sensitized solar cells (DSSCs) have become the center of attention due to low manufacturing cost. While dye-sensitized solar cells are cheap, they have relatively low efficiency. Therefore, their industrialization process hasn’t been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61c29b9a58b02de80654fc3995ba515
https://doi.org/10.1007/s11082-016-0821-6
https://doi.org/10.1007/s11082-016-0821-6