Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Mohammad B. Shabani"'
Autor:
Ayako Shimazaki, Yoshihiro Mori, Mohammad B. Shabani, Norikuni Yabumoto, Kazuo Nishihagi, Harumi Shibata, Yohichi Gohshi, Hikari Takahara, Motoyuki Yamagami
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 90:72-82
Vapor phase treatment (VPT) was under investigation by the International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) to improve the detection limit of total reflection X-ray fluorescence spectroscopy (TXRF
Publikováno v:
Solid State Phenomena. :399-404
The effectiveness of phosphorus diffusion gettering (PDG) and related segregation coefficients for different metal impurities were measured applying thermal treatments in the temperature range 800-950 °C for different times. We used multi-crystallin
Publikováno v:
Solid State Phenomena. :385-394
The dependence of the effective diffusion coefficient of Cu on boron concentration in p-type silicon at different temperatures has been measured. The quantitative diffusion and gettering of Copper from the bulk into the polysilicon backside have been
Publikováno v:
Materials Science and Engineering: B. 102:238-246
We report on instrumentation-related challenges of applying graphite furnace atomic absorption spectroscopy (GF-AAS) and inductively coupled plasma mass spectrometry (ICP-MS). We show that a significant amount of polyatomic species derived from silic
Publikováno v:
Solid State Phenomena. :539-546
Publikováno v:
Solid State Phenomena. :331-340
Autor:
P. Taylor, Cheng Ming Wang, Sang Bae Kim, K. Takashima, L. Williamson, Toshihiro Yoshimi, B. Snegirev, Mohammad B. Shabani, D. Lange, F.G. Kirscht
Publikováno v:
Solid State Phenomena. :355-364
A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
Publikováno v:
Solid State Phenomena. :81-90
Publikováno v:
Journal of The Electrochemical Society. 143:2025-2029
We investigated low temperature out-diffusion of Cu impurity from the bulk of p- and n-type silicon wafers after contamination followed by diffusion of Cu into silicon during annealing. We show that Cu impurity in the bulk after low-temperature out-d
Publikováno v:
Analytical Chemistry. 68:4418-4423
A method has been developed for the determination of the rare earth elements (REE) at concentrations down to 0.1 ppt (0.5 pmol kg-1) in aqueous samples using flow injection coupled to an inductively coupled plasma mass spectrometer. The method presen