Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mohamed Salah Halati"'
Autor:
Mohamed Salah Halati, Oleg Yu Khyzhun, Abderrazak Khireddine, Michal Piasecki, Ilona Radkowska, Khaled Hamdi Cherif, Zakia Lounis, Yves Caudano, Abdelhak Bedjaoui, Ahmed Alghamdi, Prabhu Paramasivam, Chander Prakash, Sherif S. M. Ghoneim
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-23 (2024)
Abstract In the present work, we report on theoretical studies of thermodynamic properties, structural and dynamic stabilities, dependence of unit-cell parameters and elastic constants upon hydrostatic pressure, charge carrier effective masses, elect
Externí odkaz:
https://doaj.org/article/704aa6a64e404e3682de502b234e64f3
Autor:
Kadda Benmohktar Bensassi, Abdelmadjid Bouhemadou, Azzeddine Mokadem, Bachir Kharoubi, Mahfoud Abdelkrim, Mohamed Salah Halati, Abdelhak Bedjaoui, M. Bouslama, Halima Benchenane, A. Ouerdane, M'hamed Guezzoul, Abdelhak Baizid
Publikováno v:
Applied Surface Science. 566:150690
Our work aims to establish a correspondence between the obtained theoretical and experimental results on the electronic and optical properties of ZnSe. The calculated DOS (Density of States) using the FP-LAPW method with the Tran-Blaha modified Becke
Autor:
M'hamed Guezzoul, Halima Benchenane, M. Bouslama, Abdelhak Baizid, Mohamed Salah Halati, A. Ouerdane, Bachir Kharroubi, Azzeddine Mokadem, Mahmoud Bedrouni, Mahfoud Abdelkrim, Kadda Benmokhtar Bensassi
Publikováno v:
Computational Condensed Matter. 27:e00558
In this paper, we investigate the effect of Potassium substitution on structural, electronic and optical properties of Zn1-xKxO compounds with (x = 0, 0.0625, 0.125 and 0.25) using Full Potential Linearized Augmented Plane Waves (FP-LAPW). The struct
Autor:
Abdelhak Baizid, Azzeddine Mokadem, Mahfoud Abdelkrim, M'hamed Guezzoul, Kadda Benmokhtar Bensassi, Abdelkader Abdellaoui, A. Ouerdane, Mohamed Salah Halati, Bachir Kharroubi, Mahmoud Bedrouni, M. Bouslama
Publikováno v:
Applied Surface Science. 520:146302
The undoped and Cu-doped zinc oxide (UZO and CZO) thin films deposited on Si substrate were treated in the UHV (Ultra-High Vacuum) system using Ar+ sputtering followed by a controlled annealing process at 650 °C. The sensitive experimental technique