Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Mohamed N. Darwish"'
Autor:
Jiang Liu, Wen Fang Du, Mohamed N. Darwish, Zhu Tao, Rui Jin, Yao Hua Wang, Wen Hong Zhang, Kui Pu, Jun Zeng
Publikováno v:
Materials Science Forum. 963:643-646
A 3.3 kV rated Si-SiC hybrid IGBT with Si-based active structure and Si/SiC composite junction edge termination is proposed in this paper. A single deep and wide Si trench, capped with a hetero-epitaxially grown SiC layer, is employed as the edge ter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9310e98fe57a2ca4e0309b3c9385f78f
https://doi.org/10.4028/www.scientific.net/msf.963.643
https://doi.org/10.4028/www.scientific.net/msf.963.643
Autor:
Mohamed N. Darwish, Zhang Wenhong, Pan Yin, Longlai Xu, Jun Zeng, Yaohua Wang, Xiaohu Deng, Rui Jin, Kui Pu, Li Li
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
A ultra-high temperature diffusion process with thin oxide layer capped with polysilicon film to get a deep VLD (Variable Lateral Doping) junction edge termination of 4500V trench-gated IGBT platform is presented in this paper. Conventionally, the VL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee696a5a663540e57d190eb2db80b670
https://doi.org/10.1109/edtm50988.2021.9420908
https://doi.org/10.1109/edtm50988.2021.9420908
Autor:
Jun Zeng, Shaohua Dong, Rui Jin, Zhang Wenhong, Mohamed N. Darwish, Yaohua Wang, Kui Pu, Longlai Xu
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In FACTS (Flexible AC Transmission Systems) and VSC-HVDC (Voltage Sourced Converter based High Voltage Direct Current) system, IGBT (Insulated Gate Bipolar Transistor) modules consisted of dozens of IGBT chips are required to achieve huge current cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe3faffe9a2f6c99522770f79bfb80da
https://doi.org/10.1109/edtm47692.2020.9117906
https://doi.org/10.1109/edtm47692.2020.9117906
Autor:
Phil Rutter, Richard K. Williams, Mohamed N. Darwish, Yusuke Kawaguchi, Ralf Siemieniec, Richard A. Blanchard
Publikováno v:
IEEE Transactions on Electron Devices. 64:674-691
The historical and technological development of the ubiquitous trench power MOSFET (or vertical trench VDMOS) is described. Overcoming the deficiencies of VMOS and planar VDMOS, trench VDMOS innovations include pioneering efforts in reactive ion etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::868ac6ddfd5e94a62fae3c18f7ecae99
https://doi.org/10.1109/ted.2017.2653239
https://doi.org/10.1109/ted.2017.2653239
Autor:
Richard A. Blanchard, Phil Rutter, Mohamed N. Darwish, Yusuke Kawaguchi, Ralf Siemieniec, Richard K. Williams
Publikováno v:
IEEE Transactions on Electron Devices. 64:692-712
The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose trench vertical DMOS, application specific trench DMOS comprise devices merged or optimized for a specific function or c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2cab70ba7c69946e8dd207c7bdc7aa9
https://doi.org/10.1109/ted.2017.2655149
https://doi.org/10.1109/ted.2017.2655149
Publikováno v:
IEEE Transactions on Electron Devices. 44:1529-1538
A new, comprehensive, physically-based, semiempirical, local model for transverse-field dependent electron and hole mobility in MOS transistors is presented. In order to accurately predict the measured relationship between the effective mobility and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62d9013d9819d90e7264de162e1382af
https://doi.org/10.1109/16.622611
https://doi.org/10.1109/16.622611
Publikováno v:
Guide to State-of-the-Art Electron Devices
Power Devices and ICs control the energy flow between a power source and one or more electrical loads, regulating voltage and current, driving motors, charging batteries and facilitating safety fun ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::233f1c606283a1a8f9d8e8a00e764c6d
https://doi.org/10.1002/9781118517543.ch15
https://doi.org/10.1002/9781118517543.ch15
Autor:
Peter Lloyd, Janet L. Lentz, Colin C. McAndrew, Michael J. McLennan, Ken Haruta, Kishore Singhal, Sani R. Nassif, Conor S. Rafferty, M.R. Pinto, Peter M. Zeitzoff, Mohamed N. Darwish, Hong-Ha Vuong, Kumud Singhal, Isik C. Kizilyalli
Publikováno v:
Microelectronics Journal. 26:79-97
Technology computer-aided design (TCAD) is essential to the design of modern integrated circuit fabrication processes. TCAD tools must not only model real processes accurately, to allow predictive simulation during technology research and development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a859575b2e80331963c88dcbadc22d
https://doi.org/10.1016/0026-2692(95)98915-e
https://doi.org/10.1016/0026-2692(95)98915-e
Autor:
Mohamed N. Darwish, M.A. Shibib
Publikováno v:
IEEE Transactions on Electron Devices. 38:1600-1604
The authors present a unified view of lateral MOS-gated power devices based on the underlying device physics. This unified view facilities a qualitative understanding of the relative merit of different devices and their performance. Various MOS-contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42540257eeb10dc5024e6610a58c4613
https://doi.org/10.1109/16.85155
https://doi.org/10.1109/16.85155
Autor:
Kuo-In Chen, Qufei Chen, Frederik P. Giles, Kam Hong Lui, Deva Pattanayak, King Owyang, Ben Chan, Kyle Santa Clara Terrill, Christina Yue, Mohamed N. Darwish
Publikováno v:
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
A new power Trench MOSFET with W-shaped gate structure (WMOSFET) that demonstrates a significant reduction in gate-drain charge Qgd, a low on-resistance, and good production process margin is reported. The gate is formed using a thicker oxide at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77e5c7a906b09b0f0e73f377b958d8b6
https://doi.org/10.1109/ispsd.2003.1225222
https://doi.org/10.1109/ispsd.2003.1225222