Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mohamed Mohamedou"'
Autor:
Hussein Rappel, Chi Nghia Chung, Aitor Arriaga, Zoltan Major, Lars Beex, Mohamed Mohamedou, Ludovic Noels, Ling Wu, Laurent Adam, Kepa Zulueta
Publikováno v:
Composite Structures, 220, 64-80. Netherlands: Elsevier (2019).
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We present a stochastic approach combining Bayesian Inference (BI) with homogenization theories in order to identify, on the one hand, the parameters inherent to the model assumptions and, on the other hand, the composite material constituents behavi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c53ae20dffe40efe1492507cdb4c5173
https://doi.org/10.1016/j.compstruct.2019.03.066
https://doi.org/10.1016/j.compstruct.2019.03.066
Autor:
Siegfried Selberherr, Viktor Sverdlov, Simone Fiorentini, Mohamed Mohamedou, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Micromagnetic simulations of MRAM cells are a computationally demanding task. Different methods exist to handle the computational complexity of the demagnetizing field, the most expensive magnetic field contribution. In this work we show how the dema
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b044ee1e8c736cbd67da8ab4c41cd4e8
https://doi.org/10.23919/sispad49475.2020.9241662
https://doi.org/10.23919/sispad49475.2020.9241662
Autor:
Viktor Sverdlov, Johannes Ender, Siegfried Selberherr, Simone Fiorentini, Roberto Lacerda de Orio, Wolfgang Goes, Mohamed Mohamedou
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Spin-transfer torque based devices are among the most promising candidates for emerging nonvolatile memory. Reliable simulation tools can help understand and improve the design of such devices. In this paper, we extend the drift-diffusion approach fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fb78aaa67b2b01f8337b073166d53d6
https://doi.org/10.23919/sispad49475.2020.9241657
https://doi.org/10.23919/sispad49475.2020.9241657
Comprehensive modeling of coupled spin-charge transport and magnetization dynamics in STT-MRAM cells
Autor:
Mohamed Mohamedou, Siegfried Selberherr, Roberto Lacerda de Orio, Viktor Sverdlov, Johannes Ender, Simone Fiorentini, Wolfgang Goes
Publikováno v:
Spintronics XIII.
We employ a finite element discretization scheme to solve numerically the coupled spin and charge transport equations in spin-transfer torque magnetoresistive random access memory cells. To adapt the drift-diffusion formalism to the case of a magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39fd68d9999509653f08d401661440b5
https://doi.org/10.1117/12.2567480
https://doi.org/10.1117/12.2567480