Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Mohamed Kechouane"'
Autor:
Soraya Bouachma, Xiaoying Zheng, Alonso Moreno Zuria, Mohamed Kechouane, Noureddine Gabouze, Mohamed Mohamedi
Publikováno v:
Materials, Vol 17, Iss 16, p 4079 (2024)
Efficient and sustainable energy storage remains a critical challenge in the advancement of energy technologies. This study presents the fabrication and electrochemical evaluation of a self-supporting electrode material composed of MnO2 nanorods grow
Externí odkaz:
https://doaj.org/article/bd53e112dbba49dd883eb5dafce59971
Autor:
Wafa Achour, Fayssal Ynineb, Toufik Hadjersi, Fatsah Moulai, Madjid Ifires, Adel Khen, Amar Manseri, Mohamed Kechouane
Publikováno v:
Journal of Applied Electrochemistry.
Publikováno v:
Journal of Metastable and Nanocrystalline Materials. 32:1-13
Nanocrystalline Ni75Fe25 (Ni3Fe) powders were prepared by mechanical alloying process using a vario-planetary high-energy ball mill. The intermetallic Ni3Fe formation and different physical properties were investigated, as a function of milling time,
Publikováno v:
Reaction Kinetics, Mechanisms and Catalysis. 129:1115-1130
We report the photocatalytic properties of ZnO and Cu2O thin films deposited on glass substrates at room temperature by DC sputtering and pulsed laser deposition. The photoactivity of the films was investigated through the degradation of rhodamine B
Autor:
Mohamed Kechouane, Nadia Saoula, Mourad Azibi, M. R. Khelladi, L. Bait, Hind Zegtouf, N. Madaoui
Publikováno v:
Journal of Electrical Engineering. 70:117-121
ZrO2 thin films were deposited on 316L stainless steel substrate by a radio-frequency magnetron sputtering system. The substrate bias voltage, the working gas rate and the reactive gas fraction in the gas mixture were varied. These variations produce
Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition
Autor:
Roberto Macaluso, M.S. Aida, Bartolomeo Megna, Isodiana Crupi, Mohamed Kechouane, A. Boughelout
Publikováno v:
Journal of Electronic Materials. 48:4381-4388
Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their im
Publikováno v:
Silicon. 12:405-411
In this work, we will study the crystallization of P type hydrogenated amorphous silicon (a-Si:H) by Aluminum Induced Crystallization technique (CIA) by varying the thickness of the aluminum films. We have deposited a 100 nm thickness of p-type a-Si:
Autor:
Chafiaa Yaddadene, Malika Berouaken, Maha Ayat, Mohamed Kechouane, Noureddine Gabouze, Katia Ayouz, Luca Boarino
Publikováno v:
Silicon. 11:2669-2674
Porous silicon (PSi) structures with strong hydrophobicity have been achieved by chemical etching of p-type silicon substrates in a solution based on hydrofluoric acid solution (HF) and vanadium oxide (V2O5). The surface morphology and microstructure
Autor:
Abdelmadjid Benabdelmoumene, Boualem Djezzar, Amel Chenouf, Mohamed Kechouane, Boumediene Zatout
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 18:583-591
This paper presents a new attempt to further understand negative bias temperature instability (NBTI) stress in semiconductor devices. NBTI impact has been experimentally investigated on both p-substrate MOS (nMOS-capacitor) and nMOS transistors under
Publikováno v:
Journal of Electronic Materials. 48:916-924
Aluminum oxide (Al2O3) films of different thicknesses were deposited on quartz and silicon (100) substrates by an ultrasonic spray method from a solution of aluminum acetylacetonate dissolved in N,N-dimethylformamide with different molar concentratio