Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Mohamed Hussein Eissa"'
Autor:
Klaus Schmalz, Alexandra Gluck, Nick Rothbart, Alper Guner, Mohamed Hussein Eissa, Heinz-Wilhelm Hubers
Publikováno v:
IEEE Journal of Microwaves, Vol 2, Iss 4, Pp 582-591 (2022)
This paper presents a transmitter (TX) and a receiver (RX) with a cross-polarized bowtie-antenna on a silicon lens for gas spectroscopy at 222–270 GHz and the doubled frequency at 444–540 GHz. TX and RX are fabricated in 0.13 μm SiGe BiCMOS tech
Externí odkaz:
https://doaj.org/article/79e0e6e1f49f4a1ebd2b57a881ce93fa
Autor:
Klaus Schmalz, Nick Rothbart, Alexandra Gluck, Mohamed Hussein Eissa, Thomas Mausolf, Esref Turkmen, Selahattin Berk Yilmaz, Heinz-Wilhelm Hubers
Publikováno v:
IEEE Access, Vol 9, Pp 124805-124816 (2021)
This paper presents a transmitter (TX) and a receiver (RX) with bowtie-antenna and silicon lens for gas spectroscopy at 222-270 GHz, which are fabricated in IHP’s $0.13~\mu \text{m}$ SiGe BiCMOS technology. The TX and RX use two integrated local os
Externí odkaz:
https://doaj.org/article/6dc77528f1074b16bdf796b3bcb5c30f
Autor:
Lukasz Lopacinski, Miroslav Marinkovic, Goran Panic, Mohamed Hussein Eissa, Alireza Hasani, Karthik Krishnegowda, Rolf Kraemer
Publikováno v:
IEEE Access, Vol 7, Pp 44489-44502 (2019)
In this paper, we show our 165 Gbps data link layer processor for wireless communication in the terahertz band. The design utilizes interleaved Reed-Solomon codes with dedicated link adaptation, fragmentation, aggregation, and hybrid-automatic-repeat
Externí odkaz:
https://doaj.org/article/b19cb8949d1843af8e793af4997ad504
Autor:
Raqibul Hasan, Mohamed Hussein Eissa, Wael Abdullah Ahmad, Herman Jalli Ng, Dietmar Kissinger
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:59-70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b313dbb7974b104c65569ecd26bb9ac
https://doi.org/10.1109/tmtt.2022.3207995
https://doi.org/10.1109/tmtt.2022.3207995
Publikováno v:
IEEE Microwave and Wireless Technology Letters. :1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610fd5ca01eab6d3127777ec8ad467f2
https://doi.org/10.1109/lmwt.2023.3264515
https://doi.org/10.1109/lmwt.2023.3264515
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. :1-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10cf9adb6cf66a33dbf5b61ff0f43a4e
https://doi.org/10.1109/tmtt.2023.3269519
https://doi.org/10.1109/tmtt.2023.3269519
Publikováno v:
IEEE Microwave and Wireless Components Letters. 32:331-334
This work presents a 300-GHz low-noise amplifier (LNA) in a SiGe:C 130-nm BiCMOS technology, featuring $f_{t}$/$f_{max}$ of 470/700 GHz. The designed amplifier uses three cascaded stages in a pseudo-differential cascode topology with input and output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29590c1a3baba8b2238c89a0e1769023
https://doi.org/10.1109/lmwc.2021.3128762
https://doi.org/10.1109/lmwc.2021.3128762
Publikováno v:
IEEE Microwave and Wireless Components Letters. 31:981-984
This letter presents a dual-polarization beamformer chip for fifth-generation (5G) applications. The chip leverages a vector-sum phase shifter (VSPS) approach and single-ended design, allowing a reduced control circuitry complexity. The use of the VS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3684df73cafec560bc24029240807a03
https://doi.org/10.1109/lmwc.2021.3087245
https://doi.org/10.1109/lmwc.2021.3087245
Publikováno v:
IEEE Solid-State Circuits Letters. 4:40-43
This letter presents a D-band (110 to 170 GHz) transmit–receive module in 0.13- $\mu \text{m}$ silicon–germanium (SiGe) BiCMOS for phased-array applications. The module includes single-pole double throw (SPDT) switches, a low noise amplifier (LNA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28e949f158f36deef73acec4b3a7c90c
https://doi.org/10.1109/lssc.2021.3054512
https://doi.org/10.1109/lssc.2021.3054512
Publikováno v:
IEEE Microwave and Wireless Components Letters
This letter presents a fully integrated three-stage single-ended $D$ -band power amplifier (PA) designed in 0.13- $\mu \text{m}$ silicon–germanium (SiGe) BiCMOS technology. Several bandwidth extension techniques and matching networks are mutually e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83f46ae7081c49590c9bbe4ea166b27a
https://doi.org/10.1109/lmwc.2020.3036937
https://doi.org/10.1109/lmwc.2020.3036937