Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Mohamed Goudjil"'
Publikováno v:
International Journal of Automation and Computing. 15:290-298
Support vector machines (SVMs) are a popular class of supervised learning algorithms, and are particularly applicable to large and high-dimensional classification problems. Like most machine learning methods for data classification and information re
Publikováno v:
Research Journal of Applied Sciences, Engineering and Technology. 10:1363-1369
The machine learning approaches to text categorization proceed by teaching the system how to classify through labeled samples. In real application scenarios, the collection of training (labeled) samples to design a classifier is not always trivial du
Autor:
Amel Chenouf, Abdelmadjid Benabdelmoumene, Boualem Djezzar, Youcef Kribes, Mohamed Goudjil, Hakim Tahi
Publikováno v:
Solid-State Electronics. 106:54-62
In this manuscript, we have investigated the negative bias temperature instability (NBTI) induced border-trap ( N bt ) depth in the interfacial oxide region of PMOS transistors using multi-frequency charge pumping (MFCP) method. We emphasize on the d
Autor:
Becharia Nadji, Boualem Djezzar, Abdelmadjid Benabdelmomene, Mohamed Goudjil, Cherifa Tahanout, Hakim Tahi
Publikováno v:
Journal of Electronic Testing. 30:415-423
The Negative bias temperature instability (NBTI) is one of the most important reliability issues for modern CMOS technology. Accurate reliability prediction necessitates physically based models for NBTI and accurate methods for estimation of interfac
Publikováno v:
Microelectronics Reliability. 54:882-888
By extracting and eliminating the geometric component from the charge pumping current (ICP) in on-the-fly oxide trap method (OTFOT), we have been able to demonstrate that both interface (ΔNit) and deep hole oxide traps ( Δ N ot D ) induced by the n
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 27:908-914
The present paper deals with the modeling of low-dimensional transistors in the form of metal-oxide-semiconductor field-effect transistors aiming a compact model that may be used to enrich the characterization tools in use and eventually help to extr
Publikováno v:
2015 Internet Technologies and Applications (ITA).
The spread of many infectious diseases recently has necessitated the need to monitor them. Therefore, we present an idea for developing an web-based analysis system that will be able to regularly collect news reports from Arabic newspaper websites, a
Publikováno v:
IDT
This paper presents an experimental analysis of the impact of AC- and DC-type Negative Bias Temperature Instability (NBTI) stresses on the CMOS inverter DC response and robustness. The results reveal, on one side, that the inverter DC response under
Autor:
Abdelmadjid Benabdelmoumene, Amel Chenouf, Hakim Tahi, Fayçal Hadj Larbi, Rafik Serhane, Mohamed Goudjil, Boualem Djezzar, Mohamed Kechouane
Publikováno v:
ICM
Negative bias temperature instability (NBTI) has been examined on p-MOSFET and n-MOSFET with different channel lengths. The experiments have shown a channel length dependence on NBTI-degradation, indicating inhomogeneous distribution of NBTI-induced
Autor:
Djamila Doumaz, Abdelhak Feraht Hemida, Karim Benmassai, Hakim Tahi, Mohamed Goudjil, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Mohamed Boubaaya
Publikováno v:
IDT
Negative and positive bias temperature instability (NBTI and PBTI) are described in the same model using the Reaction-Diffusion (RD) by taking into account all protagonist diffusion hydrogenate species; hydrogen atom (H), proton (H+) and hydrogen mol