Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Mohamed El-Banna"'
Publikováno v:
Ain Shams Engineering Journal, Vol 14, Iss 7, Pp 102007- (2023)
TFET accurate physically based models are highly required to analyze and predict the device characteristics for its future utilization in circuits. In order to precisely model TFETs, it is essential to understand the several aspects related to the ph
Externí odkaz:
https://doaj.org/article/5783a20aff6b41d090ace9027cef329f
Autor:
Yasser Abd El Razek, Walaa Sabry, Heba Hendawy, Dalia Hegazy, Marwa Soultan, Mohamed El Banna
Publikováno v:
Middle East Current Psychiatry, Vol 26, Iss 1, Pp 1-11 (2019)
Abstract Background A strong relationship between dementia caregiving and negative consequences on psychological health of caregivers has been established in numerous studies. A meticulous evaluation of caregiver mental status function is of utmost i
Externí odkaz:
https://doaj.org/article/74e2d266a313471fbca67e5fe394e97a
Publikováno v:
The Egyptian Journal of Hospital Medicine. 84:1739-1748
Background: Nurses are considered a key element to break the chain of the infection through their adherence to standard precautions. Many factors may hinder nurses’ adherence to these precautions as; shortage of nurses, high number of patient ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55c45b73ec5c51660f5ab805520cee3b
https://doi.org/10.21608/ejhm.2021.176470
https://doi.org/10.21608/ejhm.2021.176470
Autor:
Hesham Kamel, Mohamed Abouelatta, Yasmin Yahia, Mohamed El-Banna, Ahmed Shaker, Marwa S. Salem
Publikováno v:
Ain Shams Engineering Journal, Vol 13, Iss 1, Pp 101539-(2022)
In this current study, a modified pseudo two-dimensional (2-D) semi-analytical model for double gate tunnel FETs (DG-TFETs) is introduced. The main regions in the DG-TFET structure are the channel and the depletion regions inside the source and the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b39967f03683210e69ce9a6200f2882
http://www.sciencedirect.com/science/article/pii/S2090447921002902
http://www.sciencedirect.com/science/article/pii/S2090447921002902
Autor:
Walaa Sabry, Mohamed El Banna, Dalia Hegazy, Heba F Hendawy, Yasser Abd El Razek, Marwa Soultan
Publikováno v:
Middle East Current Psychiatry, Vol 26, Iss 1, Pp 1-11 (2019)
Background A strong relationship between dementia caregiving and negative consequences on psychological health of caregivers has been established in numerous studies. A meticulous evaluation of caregiver mental status function is of utmost importance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::335ad88baa73d21af4e5434c72b73c25
http://link.springer.com/article/10.1186/s43045-019-0006-7
http://link.springer.com/article/10.1186/s43045-019-0006-7
Autor:
Ahmed Shaker, Mohamed Abouelatta, Abdelhalim Zekry, Christian Gontrand, Marwa S. Salem, Mohamed El-Banna
Publikováno v:
National Academy Science Letters. 43:167-170
In this letter, a planar integration using the deep trench isolation (DTI) technique is proposed to suppress the inter-well parasites in smart power integrated circuits implemented in 0.35 µm BiCMOS technology. In this technology, all devices share
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c6d0fd8ff5b2fba2e0849f34f2302d
https://doi.org/10.1007/s40009-019-00830-0
https://doi.org/10.1007/s40009-019-00830-0
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 106:346-351
Gate dielectric scaling is a vital key to improve the steep switching characteristics of TFETs. However, scaling down the oxide thickness causes high gate leakage current that cannot be neglected. The impact of the leakage current on the device opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29c402bb0edd6ee17cd21733b0210775
https://doi.org/10.1016/j.physe.2018.07.001
https://doi.org/10.1016/j.physe.2018.07.001
Publikováno v:
2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM).
This paper proposes a novel Si-TFET based on a tapered channel structure. The taper-channel design presented in this work provides a higher thickness at the source side than at the drain side, whereas the gate oxide is lesser at the source than at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5564dfd020569dc44eb21221706685e5
https://doi.org/10.1109/icicm50929.2020.9292260
https://doi.org/10.1109/icicm50929.2020.9292260
Autor:
Mohamed-Hesham Daba, Noura El Adle Khalaf, Youssef Mohammed Mosaad, Mona Younis Youssef, Rehab H. Ashour, Farida Mohamed El Banna
Publikováno v:
Pharmacology, biochemistry, and behavior. 195
Background and aim Alzheimer's disease (AD) is a progressive neurodegenerative disease. Multiple molecular mechanisms have been employed in its pathogenesis such as Amyloid β (Aβ) formation, tau protein hyperphosphorylation, reduced acetylcholine (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41746bfef11f11302640c7d1e74464be
https://pubmed.ncbi.nlm.nih.gov/32474163
https://pubmed.ncbi.nlm.nih.gov/32474163
Publikováno v:
Semiconductor Science and Technology. 36:075012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba27d2457dbecaddcd7b6ee3de629a0
https://doi.org/10.1088/1361-6641/ac04c6
https://doi.org/10.1088/1361-6641/ac04c6