Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Mohamed Boubaaya"'
Autor:
Boualem Djezzar, Mohamed Boubaaya, Abdelkader Zitouni, Abdelmadjid Benabdelmoumene, Dhiaelhak Messaoud, Boumediene Zatout
Publikováno v:
Algerian Journal of Signals and Systems. 6:24-31
To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts
Autor:
Alessio Spessot, Mohamed Boubaaya, Pierre C. Fazan, Barry O'Sullivan, E. Dupuy, J. Franco, V. Machkaoutsan, A. Ferhat Hamida, Eugenio Dentoni Litta, Cheolgyu Kim, Djamila Bennaceur-Doumaz, Romain Ritzenthaler, D. Linten, Boualem Djezzar, Naoto Horiguchi
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:269-277
Fin height and width dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high- $\kappa $ metal gate (HKMG) FinFET transistors is reported for the first time. It was observed that NBTI degradation is less seve
Autor:
Hakim Tahi, Cherifa Tahanout, Boualem Djezzar, Sidi Mohammed Merah, Mohamed Boubaaya, Bacharia Nadji, Nadia Saoula
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:99-105
In this paper, we report an experimental evidence of the impact of applied a low magnetic field ( ${B ) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both int
Autor:
Abdelmadjid Benabdelmoumene, Boualem Djezzar, Dhiaelhak Messaoud, Mohamed Boubaaya, Boumediene Zatout, Hakima Timlelt, Amel Chenouf, Hakim Tahi
Publikováno v:
Microelectronics Reliability. 110:113703
Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to reveal the existence of turn around phenomenon during stress phase. At
Publikováno v:
2017 5th International Conference on Electrical Engineering - Boumerdes (ICEE-B).
In this paper, we present a new spectroscopic technique based on electrically detected magnetic resonance (EDMR), called multi-frequencies spin dependent charge pumping (MF-SDCP). This technique used the frequency dependence of the spin dependent cha
Autor:
Nadia Saoula, Mohamed Marah, Boualem Djezzar, Hakim Tahi, Mohamed Boubaaya, Cherifa Tahanout, Becharia Nadji
Publikováno v:
2015 IEEE International Integrated Reliability Workshop (IIRW).
In this paper, we investigated the magnetic field impact on negative bias temperature instability (NBTI) of commercial power double diffused MOS transistor (VDMOS), using the charge pumping method (CP). We reported that both NBTI induce -interface an
Autor:
Djamila Doumaz, Amel Chenouf, Abdelmadjid Benabdelmomene, Cherifa Tahanout, Abdelhak Feraht Hemida, Mohamed Boubaaya, Hakim Tahi, Boualem Djezzar
Publikováno v:
2015 IEEE International Integrated Reliability Workshop (IIRW).
Instead, the classical consideration that the geometric component in charge pumping method (CP) is parasitic component, in this work we demonstrate that this component can be used to estimate the negative bias temperature (NBTI) induced mobility degr
Autor:
Djamila Doumaz, Abdelhak Feraht Hemida, Karim Benmassai, Hakim Tahi, Mohamed Goudjil, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Mohamed Boubaaya
Publikováno v:
IDT
Negative and positive bias temperature instability (NBTI and PBTI) are described in the same model using the Reaction-Diffusion (RD) by taking into account all protagonist diffusion hydrogenate species; hydrogen atom (H), proton (H+) and hydrogen mol
Autor:
Mohamed Boubaaya, Amel Chenouf, Hakim Tahi, Karim Benmassai, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Boualem Djezzar
Publikováno v:
IDT
The identification of the microstructure defects responsible of metal-oxide-silicon field effect transistor (MOSFET) reliability problems is important to understand, the physical mechanisms behind these problems. In this paper, the effective dipole m
Autor:
Abdelmadjid Benabdelmomene, Mohamed Boubaaya, Boualem Djezzar, Jean Michel Le Floch, Amel Chenouf, Karim Benmessai, Cherifa Tahanout, Hakim Tahi, Mohamed Goudjil
Publikováno v:
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).
In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B it ) and oxide trap (ΔN ot ) induced by NBTI stress decrease by applied magnetic field. This decrease is more pronounced as the magnetic field is high