Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Mohamed Alsharef"'
Autor:
Erdin Ture, Peter Bruckner, Birte-Julia Godejohann, Rolf Aidam, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rudiger Quay, Oliver Ambacher
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors ar
Externí odkaz:
https://doaj.org/article/0bfbf3a76e014c1997607dcc0c39d50d
Autor:
Mohamed Alsharef, Ibrahim B. M. Taha, Mohamed K. Metwaly, Amr M. Abd-Elhady, Nehmdoh A. Sabiha, Nagy I. Elkalashy, Ehab E. Elattar
Publikováno v:
International Journal of Power Electronics and Drive Systems (IJPEDS). 12:20
In this paper, a smart drive system of the induction motor (IM) is proposed and adapted for applications in electric vehicles (EVs). Objectively, the EV drive systems are robust over wide speed and torque ranges. The proposed drive system is independ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a9f10cf14c2b3697de3eae2402dffd7
https://doi.org/10.11591/ijpeds.v12.i1.pp20-28
https://doi.org/10.11591/ijpeds.v12.i1.pp20-28
Autor:
Erdin Ture, Oliver Ambacher, Frank Schwierz, Ralf Granzner, Ridiger Quay, Mohamed Alsharef, Max Christiansen
Publikováno v:
IEEE Transactions on Electron Devices. 63:4255-4261
The impact of the trigate GaN high electron mobility transistor (HEMT) body geometry on the device RF performance is investigated by 3-D numerical simulations. The trigate concept is a viable approach to achieve normally off operation and to suppress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75ee2014974f23324b525585bc05b141
https://doi.org/10.1109/ted.2016.2606701
https://doi.org/10.1109/ted.2016.2606701
Autor:
Oliver Ambacher, Peter Brückner, Ralf Granzner, Mohamed Alsharef, Birte-Julia Godejohann, Rudiger Quay, Rolf Aidam, Erdin Ture, Frank Schwierz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24df084764533823a7297bb318b18b9d
https://doi.org/10.1109/jeds.2015.2503701
https://doi.org/10.1109/jeds.2015.2503701
Autor:
Oliver Ambacher, Peter Brückner, Erdin Ture, Mohamed Alsharef, Rudiger Quay, Ralf Granzner, Frank Schwierz
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
First-ever realization of a W-band power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) utilizing GaN-based Tri-gate high-electron-mobility transistors (HEMTs) is presented in this paper. Superior device- and circuit-level perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d981f8b5432c6f5632729df0dda4676
https://doi.org/10.1109/mwsym.2017.8058452
https://doi.org/10.1109/mwsym.2017.8058452
Publikováno v:
IEEE Transactions on Electron Devices. 60:3335-3341
The operation of AlGaN/GaN trigate high-electron mobility transistor (HEMT) structures is investigated by numerical simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN bodies and that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c04a97a6e3067f2a1e7e1f0be92f09
https://doi.org/10.1109/ted.2013.2279264
https://doi.org/10.1109/ted.2013.2279264
Autor:
Rudiger Quay, Erdin Ture, Ralf Granzner, Peter Brückner, Mohamed Alsharef, Oliver Ambacher, Frank Schwierz
Publikováno v:
2016 11th European Microwave Integrated Circuits Conference (EuMIC).
This paper reports on the design and fabrication of enhancement-mode high-electron mobility transistors (HEMTs) in AlGaN/GaN FinFET technology with 100 nm of gate length (L g = 100 nm). Provided by the lateral as well as the vertical modulation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9549a51e995d6c24cb2f09f303ca0a76
https://doi.org/10.1109/eumic.2016.7777489
https://doi.org/10.1109/eumic.2016.7777489
Publikováno v:
ESSDERC
The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and to effectively suppress short-channel effects (SCEs). Furthermore, it is shown from our si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9569386247917e5db2e93885032ec84d
https://doi.org/10.1109/essderc.2016.7599615
https://doi.org/10.1109/essderc.2016.7599615
Autor:
Mohamed Alsharef, Ronald J. Urry, Roger Mierzwinski, Marius C. Conradie, Zaheer Jogiat, Deon Naidoo, Kahlid Mahmood
Publikováno v:
Journal of Endourology. 23:1503-1507
Purpose: By evaluating the technical challenges encountered during 123 laparoscopic nephrectomies, we have been able to modify the surgical technique to allow general urologists to effectively perform the procedure with minimal complications. Design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9636d0d6c5cd487a0c5653f7236ff651
https://doi.org/10.1089/end.2009.0380
https://doi.org/10.1089/end.2009.0380
Autor:
Oliver Ambacher, Mohamed Alsharef, Rudiger Quay, Erdin Ture, Friedbert van Raay, Frank Schwierz, Ralf Granzner, Peter Brückner
Publikováno v:
2015 10th European Microwave Integrated Circuits Conference (EuMIC).
AlGaN/GaN high-electron mobility transistors (HEMTs) with varied Tri-gate topologies have been fabricated and influences of the fin-shaped nano-channels on device parasitics are examined. Through S-parameter measurements and modelling of the designed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f4ba15603c3f3561dd1e7fc249f6e2
https://doi.org/10.1109/eumic.2015.7345077
https://doi.org/10.1109/eumic.2015.7345077