Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Mohamed Ali Belaïd"'
Autor:
Mohammed Almatrafi, Mohamed Ali Belaïd
Publikováno v:
Case Studies in Thermal Engineering, Vol 59, Iss , Pp 104515- (2024)
The thermal behavior analysis is undoubtedly the main concern when studying semiconductor devices' and structures' physical mechanics. To the best of our knowledge, simulations studies with an experimental validation of the temperature effect vs. mob
Externí odkaz:
https://doaj.org/article/75daf6a33af444c3aa430956cc32e6ab
Publikováno v:
IET Circuits, Devices & Systems. 14:805-810
This study presents firstly, experimental results through an innovative reliability bench of pulsed RF life test in a radar application for device lifetime under pulse conditions, then the physical clarifications of the failure phenomenon. The result
Publikováno v:
IEEE Access, Vol 12, Pp 52990-53017 (2024)
This paper focuses on enhancing the resilience of Power Park Modules (PPMs), connected to the grid via power electronic units, under asymmetrical voltage sag conditions. We particularly address three interconnected constraints crucial for Low-Voltage
Externí odkaz:
https://doaj.org/article/69ffdd4905814d2684f529a52307f30c
Autor:
Mohamed Ali Belaïd
Publikováno v:
IET Circuits, Devices & Systems. 12:571-578
This paper treats the s -parameter performance degradation by hot electron induced for N-MOSFET devices used in radar applications. This study is relevant for devices operating in the RF frequency regime. The power LD-MOSFET device (0.8 µm channel l
Publikováno v:
Microelectronics Reliability. 51:1551-1556
This paper reports comparative study of technology reliability after accelerated ageing tests under various conditions (electrical and/or thermal stress) and RF life-tests reliability with pulsed bench for radar applications in S-band. It is importan
Autor:
K. Daoud, Mohamed Ali Belaïd
Publikováno v:
Microelectronics Reliability. 50:1763-1767
This paper presents a synthesis of hot-electron effects on power RF LDMOS performances, after accelerated ageing tests with electrical and/or thermal stress. Which can modify and degrade transistor physical and electrical behaviour. The effects of re
Autor:
J. Marcon, Hichame Maanane, Mohamed Masmoudi, Karine Mourgues, Mohamed Ali Belaïd, Philippe Eudeline, M. Gares
Publikováno v:
Microelectronics Reliability. 47:1394-1399
This paper reports comparative reliability of the hot carrier induced electrical performance degradation in power RF LDMOS transistors after RF life-tests and novel methods for accelerated ageing tests under various conditions (electrical and/or ther
Publikováno v:
Microelectronics Journal. 38:164-170
This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied to power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, air-air test) under various conditi
Publikováno v:
Microelectronics Reliability. 47:59-64
This paper presents the results of comparative reliability study of C–V characteristics through three accelerated ageing tests for stress applied to an RF LDMOS: Thermal shock tests (TST, air–air test), thermal cycling tests (TCT, air–air test)
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 253:250-254
This paper presents a synthesis of temperature effects on power RF Laterally Diffused (LD) MOS performances, which can modify and degrade transistor physical and electrical behaviour. In this work, the temperature influence on device electrical chara