Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Mohamadali Malakoutian"'
Autor:
Kelly Woo, Zhengliang Bian, Maliha Noshin, Rafael Perez Martinez, Mohamadali Malakoutian, Bhawani Shankar, Srabanti Chowdhury
Publikováno v:
JPhys Materials, Vol 7, Iss 2, p 022003 (2024)
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material c
Externí odkaz:
https://doaj.org/article/3766fe074b8c43de93e0cef1dab58df8
Autor:
Benyamin Davaji, Hak Dong Cho, Mohamadali Malakoutian, Jong-Kwon Lee, Gennady Panin, Tae Won Kang, Chung Hoon Lee
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Abstract Micro-fabricated single-layer graphenes (SLGs) on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architecture are presented for their use as temperature sensors. These graphene temperature sensors ac
Externí odkaz:
https://doaj.org/article/e4ff190e076849db972dce624e7cbcc8
Autor:
Tsenguun Byambadorj, Erfan Dashtimoghadam, Mohamadali Malakoutian, Benyamin Davaji, Lobat Tayebi, James E Richie, Chung Hoon Lee
Publikováno v:
PLoS ONE, Vol 12, Iss 8, p e0183492 (2017)
We present a new thermomechanical method and a platform to measure the phase transition temperature at microscale. A thin film metal sensor on a membrane simultaneously measures both temperature and mechanical strain of the sample during heating and
Externí odkaz:
https://doaj.org/article/0a37b698781f4ed8b77d7027e3bb31ce
Publikováno v:
Crystals, Vol 9, Iss 10, p 498 (2019)
Diamond has the most desirable thermal properties for applications in electronics. In principle, diamond is the best candidate for integration with other materials for thermal management due to its high thermal conductivity. Therefore, if low thermal
Externí odkaz:
https://doaj.org/article/f83736cc503e49cebaa96d079bb3d245
Autor:
Xinyu Zhou, Mohamadali Malakoutian, Rohith Soman, Zhengliang Bian, Rafael Perez Martinez, Srabanti Chowdhury
Publikováno v:
IEEE Transactions on Electron Devices. 69:6650-6655
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640740594c33ee57b68b55fcc7905ab7
https://doi.org/10.1109/ted.2022.3218612
https://doi.org/10.1109/ted.2022.3218612
Autor:
Sandeep K. Chaudhuri, Mohamadali Malakoutian, Joshua W. Kleppinger, Maitreya Dutta, Franz A. Koeck, Robert J. Nemanich, Srabanti Chowdhury, Krishna C. Mandal
Publikováno v:
IEEE Transactions on Electron Devices. 69:4469-4473
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50bcb0a312137763077793c894a0c973
https://doi.org/10.1109/ted.2022.3182931
https://doi.org/10.1109/ted.2022.3182931
Autor:
Mohamadali Malakoutian, Daniel E. Field, Nicholas J. Hines, Shubhra Pasayat, Samuel Graham, Martin Kuball, Srabanti Chowdhury
Publikováno v:
ACS Applied Materials & Interfaces. 13:60553-60560
The implementation of 5G-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, which are only possible with materials that can support higher frequencies. Gallium nitride (GaN) power amplifiers are essentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::426d7020222d5edc712dc1ad8ee518fe
https://doi.org/10.1021/acsami.1c13833
https://doi.org/10.1021/acsami.1c13833
Publikováno v:
ACS Applied Electronic Materials. 3:4418-4423
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fc2d43be3fafea1666cd811eae4b74f
https://doi.org/10.1021/acsaelm.1c00571
https://doi.org/10.1021/acsaelm.1c00571
Autor:
Samuel Graham, Samuel Kim, Daniel Shoemaker, Sukwon Choi, Christopher D. Nordquist, Yiwen Song, Srabanti Chowdhury, Brian M. Foley, Mohamadali Malakoutian, Bikramjit Chatterjee
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:1177-1186
GaN radio frequency (RF) power amplifiers offer many benefits including high power density, reduced device footprint, high operating voltage, and excellent gain and power-added efficiency. Accordingly, these parts are enabling next-generation technol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89f7df39782bf9b50a64ecf1436e6445
https://doi.org/10.1109/tcpmt.2021.3091555
https://doi.org/10.1109/tcpmt.2021.3091555
Publikováno v:
Crystal Growth & Design. 21:2624-2632
Integration of diamond on GaN can ease the challenges associated with thermal management of GaN-based power amplifiers which need to base on highly scaled transistors to push toward higher frequenc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5370a67ed2fffeadb431d9f9355c9cd5
https://doi.org/10.1021/acs.cgd.0c01319
https://doi.org/10.1021/acs.cgd.0c01319