Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Mohamad Towfik Krounbi"'
Autor:
Xiao Luo, A. Driskill-Smith, Kiseok Moon, D. K. Lottis, Eugene Chen, Adrian E. Ong, Xueti Tang, Vladimir Nikitin, Dmytro Apalkov, Mohamad Towfik Krounbi, Alexey Vasilyevitch Khvalkovskiy, Steven M. Watts
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 9:1-35
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c2775c0687744375cc431ae25e7d21
https://doi.org/10.1145/2463585.2463589
https://doi.org/10.1145/2463585.2463589
Autor:
D. K. Lottis, S.J. Poon, Vladimir Nikitin, Mircea R. Stan, Mohamad Towfik Krounbi, William H. Butler, Kiseok Moon, Rosa A. Lukaszew, A. Driskill-Smith, P. B. Visscher, Steven M. Watts, Dmytro Apalkov, Jiwei Lu, Eugene Chen, Subhadra Gupta, Avik W. Ghosh, Tim Mewes, Stuart A. Wolf, R. Kawakami, X. Tang, Alexey Vasilyevitch Khvalkovskiy, A. Ong, Claudia Mewes
Publikováno v:
IEEE Transactions on Magnetics. 48:3025-3030
We report our progress on material improvement, device design, wafer processing, integration with CMOS, and testing of STT-RAM memory chips at 54 nm node with cell sizes of 14 and 28 F2 (F=54 nm). A dual tunnel barrier MTJ structure was found to have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5de19d964ed399718a490a3b2b3dbc1
https://doi.org/10.1109/tmag.2012.2198451
https://doi.org/10.1109/tmag.2012.2198451
Autor:
Vincent Cros, K. A. Zvezdin, Alexey Vasilyevitch Khvalkovskiy, Dmytro Apalkov, Julie Grollier, Albert Fert, Mohamad Towfik Krounbi, Vladimir Nikitin, Abdelmadjid Anane
Publikováno v:
Physical Review B. 87
In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall configuration,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::874b15ebc3807c6a08d23bb6e51a729d
https://doi.org/10.1103/physrevb.87.020402
https://doi.org/10.1103/physrevb.87.020402
Autor:
R. Kawakami, Vladimir Nikitin, X. Tang, Dmytro Apalkov, Eugene Chen, Alexey Vasilyevitch Khvalkovskiy, Steven M. Watts, D. K. Lottis, X. Luo, K. Moon, Adrian E. Ong, A. Driskill-Smith, Mohamad Towfik Krounbi
Publikováno v:
2011 3rd IEEE International Memory Workshop (IMW).
STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eab7a036b936448f87f1178a62a5bd5
https://doi.org/10.1109/imw.2011.5873205
https://doi.org/10.1109/imw.2011.5873205
Autor:
Alexey Vasilyevitch Khvalkovskiy, Adrian E. Ong, Steven M. Watts, D. K. Lottis, Eugene Chen, William H. Butler, Robert Beach, X. Tang, Dmytro Apalkov, Vladimir Nikitin, R Chepulskii, Mohamad Towfik Krounbi, A. Driskill-Smith, P. B. Visscher
Publikováno v:
Journal of Physics D: Applied Physics. 46:139601
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d51b70055ad7bfb2994e045c5bbf7d9
https://doi.org/10.1088/0022-3727/46/13/139601
https://doi.org/10.1088/0022-3727/46/13/139601
Autor:
R Chepulskii, William H. Butler, Alexey Vasilyevitch Khvalkovskiy, D. K. Lottis, Vladimir Nikitin, Dmytro Apalkov, X. Tang, Mohamad Towfik Krounbi, Robert Beach, Steven M. Watts, A. Driskill-Smith, Eugene Chen, P. B. Visscher, Adrian E. Ong
Publikováno v:
Journal of Physics D: Applied Physics. 46:074001
For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, coveri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2b84d8ebad6952e3b0c5c77e6cbc7cc
https://doi.org/10.1088/0022-3727/46/7/074001
https://doi.org/10.1088/0022-3727/46/7/074001
Publikováno v:
The Journal of the Acoustical Society of America. 91:1201-1201
A magnetoresistive (MR) read transducer comprising an MR layer (11) having passive end regions (14) separated by a central active region (12). A longitudinal bias is produced by a thin film (16) of hard magnetic material in the end regions only, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51a0c592d311d91991803bfaa0fdf2e9
https://doi.org/10.1121/1.402564
https://doi.org/10.1121/1.402564