Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Mohamad Barmawi"'
Publikováno v:
Journal of Mathematical and Fundamental Sciences, Vol 37, Iss 2 (2013)
Ti1-xCoxO2 thin films have been deposited on Si substrate by MOCVD technique. Thin films were synthesized by a single plane orientation structure of anatase-213 at various to Co concentartions up to 5,77%. Photoluminescence emission spectra of thin f
Externí odkaz:
https://doaj.org/article/2762623886544e6ba9386d3fd4a20d2e
Autor:
Sugianto, Zainuriah Hassan, Pepen Arifin, Mohamad Barmawi, Maman Budiman, Fong Kwong Yam, K. Ibrahim
Publikováno v:
Materials Science Forum. 517:9-12
A comparative study of the structural and electrical properties of GaN films grown by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) at 700°C, with and without AlN buffer layer is presented . Hydrogen plasma was used in addition t
Publikováno v:
physica status solidi (a). 199:416-424
Thin films of lead zirconium titanate [PbZr0.525Ti0.475O3 (PZT)] and 1% tantalum-oxide-doped lead zirconium titanate [Pb0.9950(Zr0.525Ti0.465Ta0.010)O3 (PTZT)] deposited on Pt(200)/SiO2/Si(100) using the dc unbalanced magnetron sputtering (DC-UBMS) m
Publikováno v:
Materials Chemistry and Physics. 73:47-50
Thin films of YBCO have been grown by a home-built-MOCVD vertical reactor. The growth temperature were varied between 600 and 750 °C and the growth rates were 0.4–0.5 μm/h. At the substrate temperature between 630 and 675 °C, the films consist o
Publikováno v:
physica status solidi (a). 187:471-479
The effect of a flow guide in a vertical MOCVD reactor on the deposition uniformity and growth rate of thin YBCO films has been studied. Without the flow guide the growth rates are low, have a poor uniformity and the film composition is not stoichiom
Publikováno v:
Journal of Crystal Growth. 221:311-315
GaN films have been grown on a-plane (1 1 2 0) sapphire substrates by plasma-assisted MOCVD using TMGa (trimethylgallium) and plasma-cracked N2. The crystallinity, electronic properties and optical absorption of films were characterized by X-ray diff
Autor:
M. Roslan Hashim, Hassan Zainuriah, Mohamad Barmawi, Maman Budiman, S.A. Oh, Sha Shiong Ng, Sugianto, Pepen Arifin, Kamarulazizi Ibrahim
Publikováno v:
Scopus-Elsevier
In this paper, we report the characteristics of GaN heteroepitaxial films grown on Si(111)at 700oC using plasma-assisted metalorganic chemical vapour deposition (PA-MOCVD). In this growth technique, H2 plasma was used in addition to N2 plasma. Two se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ad202876ebfa7c44400fed3885a0569
http://www.scopus.com/inward/record.url?eid=2-s2.0-35148819668&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-35148819668&partnerID=MN8TOARS