Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

Autor: Nadir Idir, Bruno Allard, Jean-François Mogniotte, M. L. Beye, Thilini Wickramasinghe, Hassan Maher, Luong Viet Phung

Publikováno v: Electronics
Electronics, 2021, 10 (2), pp.106. ⟨10.3390/electronics10020106⟩
Volume 10
Issue 2
Electronics, Penton Publishing Inc., 2021, 10 (2), pp.106. ⟨10.3390/electronics10020106⟩
Electronics, Vol 10, Iss 106, p 106 (2021)

International audience; The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for impro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4596dcaff8bd7d2bdfe62736ffffa132
https://hal.science/hal-03341258/file/electronics-10-00106.pdf