An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor.

Autor: Moghadam RM; Department of Physics, University of Texas-Arlington , Arlington, Texas 76019, United States., Xiao Z; Department of Physics and Astronomy, University of Nebraska-Lincoln , Lincoln, Nebraska 68588, United States., Ahmadi-Majlan K; Department of Physics, University of Texas-Arlington , Arlington, Texas 76019, United States., Grimley ED; Department of Materials Science and Engineering, North Carolina State University , Raleigh, North Carolina 27695, United States., Bowden M; Environmental Molecular Sciences Laboratory, Earth & Biological Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States., Ong PV; Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States., Chambers SA; Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States., Lebeau JM; Department of Materials Science and Engineering, North Carolina State University , Raleigh, North Carolina 27695, United States., Hong X; Department of Physics and Astronomy, University of Nebraska-Lincoln , Lincoln, Nebraska 68588, United States., Sushko PV; Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States., Ngai JH; Department of Physics, University of Texas-Arlington , Arlington, Texas 76019, United States.

Publikováno v: Nano letters [Nano Lett] 2017 Oct 11; Vol. 17 (10), pp. 6248-6257. Date of Electronic Publication: 2017 Sep 13.