Zobrazeno 1 - 10
of 317
pro vyhledávání: '"Mogab, J"'
Autor:
Tseng, H.-H *, Veteran, J, Tobin, P.J, Mogab, J, Tsui, P.G.Y, Wang, V, Khare, M, Wang, X.W, Ma, T.P, Hobbs, C, Hegde, R, Hartig, M, Kenig, G, Blumenthal, R, Cotton, R, Kaushik, V, Tamagawa, T, Halpern, B.L, Cui, G.J, Schmitt, J.J
Publikováno v:
In Materials Science in Semiconductor Processing 2000 3(3):173-178
Autor:
Maiti, B., Tobin, P.J., Hobbs, C., Hegde, R.I., Huang, F., O'Meara, D.L., Jovanovic, D., Mendicino, M., Chen, J., Connelly, D., Adetutu, O., Mogab, J., Candelaria, J., La, L.B.
Publikováno v:
International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p781-784, 4p
Autor:
Liu, Junqi1 (AUTHOR), Nwagu, Ellis Chukwumerije1 (AUTHOR), Liu, Rongbing1 (AUTHOR) 773576312@qq.com, Wang, Qi1 (AUTHOR), Debnath, Gouranga Chandra2 (AUTHOR), Bhowmik, Roni3,4,5 (AUTHOR) 773576312@qq.com
Publikováno v:
PLoS ONE. 7/17/2024, Vol. 19 Issue 7, p1-35. 35p.
Autor:
Mathew, L., Sadd, M., Kalpat, S., Zavala, M., Stephens, T., Mora, R., Rai, R., Parker, C., Vasek, J., Sing, D., Shinier, R., Prabhu, L., Workman, G.O., Ablen, G., Shi, Z., Saenz, J., Min, B., Burnett, D., Nguyen, B.Y., Mogab, J.
Publikováno v:
2006 IEEE International Conference on IC Design & Technology; 2006, p1-4, 4p
Autor:
Vartanian, V., Sadaka, M., Zollner, S., Thean, A. V.-Y., White, T., Nguyen, B.-Y., Zavala, M., McCormick, L., Prabhu, L., Eades, D., Parsons, S., Collard, H., Kim, K., Jiang, J., Dhandapani, V., Hildreth, J., Powers, R., Spencer, G., Ramani, N., Mogab, J.
Publikováno v:
AIP Conference Proceedings; 2005, Vol. 788 Issue 1, p214-221, 8p
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p976-979, 4p
Autor:
Mathew, L., Sadd, M., Kalpat, S., Zavala, M., Stephens, T., Mora, R., Bagchi, S., Parker, C., Vasek, J., Sing, D., Shimer, R., Prabhu, L., Workman, G.O., Ablen, G., Shi, Z., Saenz, J., Min, B., Burnett, D., Nguyen, B.-Y., Mogab, J.
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p713-716, 4p
Autor:
Thean, A.V.-Y., Prabhu, L., Vartanian, V., Ramon, M., Nguyen, B.-Y., White, T., Collard, H., Xie, Q.-H., Murphy, S., Cheek, J., Venkatesan, S., Mogab, J., Chang, C.H., Chiu, Y.H., Tuan, H.C., See, Y.C., Liang, M.S., Sun, Y.C.
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p509-512, 4p
Autor:
Thean, A.V.-Y., Barr, A.L., White, T.R., Shi, Z.-H., Nguyen, B.-Y., Liu, C.-L., Beardmore, K., Jiang, J.Z.-X., Lerma, P., Duda, E., Sadaka, M., Orlowski, M., White, B.E., Jr., Mogab, J.
Publikováno v:
International Conference on Simulation of Semiconductor Processes & Devices, 2003. SISPAD 2003; 2003, p195-198, 4p
Autor:
Samavedam, S. B., Schaeffer, J. K., Gilmer, D. C., Dhandapani, V., Tobin, P. J., Mogab, J., Nguyen, B. Y., Dakshina-Murthy, S., Rai, R. S., Jiang, Z. X., Martin, R., Raymond, M. V., Zavala, M., La, L. B., Smith, J. A., Gregory, R. B.
Publikováno v:
MRS Online Proceedings Library; 2002, Vol. 716 Issue 1, p1-6, 6p