Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Moeller, Wolfhard"'
Autor:
Höflich, Katja, Hobler, Gerhard, Allen, Frances I., Wirtz, Tom, Rius, Gemma, McElwee-White, Lisa, Krasheninnikov, Arkady V., Schmidt, Matthias, Utke, Ivo, Klingner, Nico, Osenberg, Markus, Córdoba, Rosa, Djurabekova, Flyura, Manke, Ingo, Moll, Philip, Manoccio, Mariachiara, De Teresa, José Marıa, Bischoff, Lothar, Michler, Johann, De Castro, Olivier, Delobbe, Anne, Dunne, Peter, Dobrovolskiy, Oleksandr V., Frese, Natalie, Gölzhäuser, Armin, Mazarov, Paul, Koelle, Dieter, Möller, Wolfhard, Pérez-Murano, Francesc, Philipp, Patrick, Vollnhals, Florian, Hlawacek, Gregor
The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry,
Externí odkaz:
http://arxiv.org/abs/2305.19631
Autor:
Choupanian, Shiva, Moeller, Wolfhard, Seyring, Martin, Pacholski, Claudia, Wendler, Elke, Undisz, Andreas, Ronning, Carsten
Ion irradiation can cause burrowing of nanoparticles in substrates, strongly depending on the material properties and irradiation parameters. In this study, we demonstrate that the sinking process can be accomplished with ion irradiation of cube-shap
Externí odkaz:
http://arxiv.org/abs/2305.18968
Autor:
Majhi, Rabin, Satpati, Biswarup, Möller, Wolfhard, Bhattacharya, Anirban, Chatterjee, Shyamal
Publikováno v:
In Materials Today Communications August 2024 40
Autor:
Xu, Xiaomo, Prüfer, Thomas, Wolf, Daniel, Engelmann, Hans-Jürgen, Bischoff, Lothar, Hübner, René, Heinig, Karl-Heinz, Möller, Wolfhard, Facsko, Stefan, von Borany, Johannes, Hlawacek, Gregor
Publikováno v:
Beilstein Journal of Nanotechnology 9 (2018) 2883-2892
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-ener
Externí odkaz:
http://arxiv.org/abs/1910.04389
Autor:
Xu, Xiaomo, Heinig, Karl-Heinz, Möller, Wolfhard, Engelmann, Hans-Jürgen, Klingner, Nico, Gharbi, Ahmed, Tiron, Raluca, von Borany, Johannes, Hlawacek, Gregor
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the tran
Externí odkaz:
http://arxiv.org/abs/1906.09975
Autor:
Berencén, Yonder, Prucnal, Slawomir, Möller, Wolfhard, Hübner, René, Rebohle, Lars, Böttger, Roman, Glaser, Markus, Schönherr, Tommy, Yuan, Ye, Wang, Mao, Georgiev, Yordan M., Erbe, Artur, Lugstein, Alois, Helm, Manfred, Zhou, Shengqiang, Skorupa, Wolfgang
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction ban
Externí odkaz:
http://arxiv.org/abs/1802.07099
Autor:
Patra, Shyamapada, Das, Pritam, Rajbhar, Manoj K., Facsko, Stefan, Möller, Wolfhard, Chatterjee, Shyamal
Publikováno v:
In Radiation Physics and Chemistry July 2022 196
Publikováno v:
In Applied Surface Science 15 July 2021 554
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