Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Moeko Matsubara"'
Publikováno v:
ECS Transactions. 108:71-77
We investigated the liquid-phase growth of silicon-germanium (SiGe) epitaxial layers formed on Si substrates by a simple and rapid process of screen-printing of Al-Ge paste followed by high temperature annealing. Aluminum (Al) and germanium (Ge) (7:3
Autor:
Shota Suzuki, Moeko Matsubara, Hideaki Minamiyama, Marwan Dhamrin, Yasufumi Fujiwara, Yukiharu Uraoka
Publikováno v:
Materials Chemistry and Physics. 301:127639
Publikováno v:
Japanese Journal of Applied Physics. 62:SK1041
A mixed paste of aluminum (Al) and germanium (Ge) (7:3) was prepared and screen-printed on silicon (Si) substrates, followed by annealing at a peak temperature of 1000 °C in an IR rapid thermal annealing furnace to investigate the liquid-phase growt
Autor:
Masahiro Nakahara, Shota Suzuki, Moeko Matsubara, Shogo Fukami, Noritaka Usami, Marwan Dhamrin
Publikováno v:
MRS Advances. 4:749-754
The impact of the Al and Ge ratio in the Al-Ge pastes are investigated for fabricating the single-crystalline Si1-xGex thick layers on large area Si substrates by screen-printing metallization process. From X-ray reciprocal space maps, Ge fraction in
Publikováno v:
ECS Meeting Abstracts. :1281-1281
Silicon-germanium (SiGe) has been considered as an important alternative material to silicon due to its high carrier mobility, low power consumption and excellent performance [1]. However, due to both material unique phase diagram with melting points
Autor:
Yoshitaka Nishio, Moeko Matsubara, Marwan Dhamrin, Katsuya Furuna, Jianbo Liang, Naoteru Shigekawa
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P626-P632
Autor:
Shota Suzuki, Moeko Matsubara, Mel Hainey, Masahiro Nakahara, Noritaka Usami, Marwan Dhamrin, Satoru Miyamoto
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Autor:
Sho Morita, Naoteru Shigekawa, Moeko Matsubara, Asahi Hiroshi, Yoshitaka Nishio, Jianbo Liang, Yoshihisa Kaneko, Shotaro Horikawa
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
An Al foil/AlN junction is fabricated by bonding a 30-μm Al foil and a 650-μm AlN plate at room temperature and 473 K. Their bonding strength, which is measured by the 180° peel test, is estimated to be ~30 and ~60 N/m for junctions fabricated by
Publikováno v:
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
We bond a polyimide (PI) film and an Al foil by modified surface activated bonding, in which the surface of Al foil is only irradiated by the fast atom beam of Ar. It is found that the sputtered Al atoms are deposited on the surface of PI film and pl
Autor:
Yositaka Nishio, Katuya Furuna, Naoteru Shigekawa, Marwan Dhamrin, Jianbo Liang, Moeko Matsubara
Publikováno v:
ECS Transactions. 75:25-32
Abstract: We successfully bonded aluminum foils to p+-Si substrates to fabricate Al-foil/p+-Si junctions by surface activated bonding (SAB). The electrical properties of the junctions were investigated by measuring their current voltage (I-V) charact