Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Moaz Waqar"'
Autor:
Zhibo Zhao, Arun Kumar Jaiswal, Di Wang, Vanessa Wollersen, Zhengyu Xiao, Gajanan Pradhan, Federica Celegato, Paola Tiberto, Maria Szymczak, Juliusz Dabrowa, Moaz Waqar, Dirk Fuchs, Xiaoqing Pan, Horst Hahn, Robert Kruk, Abhishek Sarkar
Publikováno v:
Advanced Science, Vol 10, Iss 27, Pp n/a-n/a (2023)
Abstract High entropy oxides (HEOs), based on the incorporation of multiple‐principal cations into the crystal lattice, offer the possibility to explore previously inaccessible oxide compositions and unconventional properties. Here it is demonstrat
Externí odkaz:
https://doaj.org/article/0383693838ca46be86be2c99a90d279d
Autor:
Moaz Waqar, Haijun Wu, Khuong Phuong Ong, Huajun Liu, Changjian Li, Ping Yang, Wenjie Zang, Weng Heng Liew, Caozheng Diao, Shibo Xi, David J. Singh, Qian He, Kui Yao, Stephen J. Pennycook, John Wang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Maximizing the electromechanical response is crucial for developing piezoelectric devices. Here, the authors demonstrate a giant electric-field-induced strain and its origin in alkali niobate epitaxial thin films with self-assembled planar faults.
Externí odkaz:
https://doaj.org/article/4fea8eb63d3b45e99c472f2ed55a4523
Autor:
Baoshan Tang, Hasita Veluri, Yida Li, Zhi Gen Yu, Moaz Waqar, Jin Feng Leong, Maheswari Sivan, Evgeny Zamburg, Yong-Wei Zhang, John Wang, Aaron V-Y. Thean
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Neuromorphic computing requires the realization of high-density and reliable random-access memories. Here, Thean et al. demonstrate wafer-scale integration of solution-processed 2D MoS2 memristor arrays which show long endurance, long memory retentio
Externí odkaz:
https://doaj.org/article/eac4e8a2dcc44762b6bf2d30512c481f
Autor:
Haijun Wu, Shoucong Ning, Moaz Waqar, Huajun Liu, Yang Zhang, Hong-Hui Wu, Ning Li, Yuan Wu, Kui Yao, Turab Lookman, Xiangdong Ding, Jun Sun, John Wang, Stephen J. Pennycook
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Phase boundary engineering through chemical alloying and phase control is a traditional approach to enhancing piezoelectric properties. Here, the authors design a strategy in alkali niobate films, utilizing alkali vacancies without alloying to form n
Externí odkaz:
https://doaj.org/article/dc565174b7c54fa0a086a9bbb8a242f7
Autor:
Lei Zhang, Tong Yang, Wenjie Zang, Zongkui Kou, Yuanyuan Ma, Moaz Waqar, Ximeng Liu, Lirong Zheng, Stephen J. Pennycook, Zhaolin Liu, Xian Jun Loh, Lei Shen, John Wang
Publikováno v:
Advanced Science, Vol 8, Iss 18, Pp n/a-n/a (2021)
Abstract Atomically dispersed Pt species are advocated as a promising electrocatalyst for the oxygen reduction reaction (ORR) to boost noble metal utilization efficiency. However, when assembled on various substrates, isolated Pt single atoms are oft
Externí odkaz:
https://doaj.org/article/e5f786372e8c4f979524211050c24f95
Autor:
Muhammad Kashif, Muhammad Salman Habib, Muhammad Asif Rafiq, Moaz Waqar, Muhammad Asif Hussain, Ayesha Iqbal, Mehboob Ahmed Abbasi, Shahid Saeed
Publikováno v:
Synthesis and Sintering. 3:1-13
The classical system of combining modern perovskite and wurtzite structure semiconductor materials is used to model the internal structure for the applications of functional novel electronic devices. The structure-property relation has a significant
Publikováno v:
Energy Storage Materials. 55:64-72
Autor:
Hanmei Jiang, Wenbin Gong, Yifu Zhang, Xin Liu, Moaz Waqar, Jingjing Sun, Yanyan Liu, Xueying Dong, Changgong Meng, Zhenghui Pan, John Wang
Publikováno v:
Journal of Energy Chemistry. 70:52-58
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany).
Defects in ferroelectric materials have many implications on the material properties which, in most cases, are detrimental. However, engineering these defects can also create opportunities for property enhancement as well as for tailoring novel funct
Autor:
Qidong Xie, Weinan Lin, Jinghua Liang, Hengan Zhou, Moaz Waqar, Ming Lin, Siew Lang Teo, Hao Chen, Xiufang Lu, Xinyu Shu, Liang Liu, Shaohai Chen, Chenghang Zhou, Jianwei Chai, Ping Yang, Kian Ping Loh, John Wang, Wanjun Jiang, Aurelien Manchon, Hongxin Yang, Jingsheng Chen
Publikováno v:
Advanced Materials
Advanced Materials, 2022, 34 (33), pp.2109449. ⟨10.1002/adma.202109449⟩
Advanced Materials, 2022, 34 (33), pp.2109449. ⟨10.1002/adma.202109449⟩
Van der Waals materials are attracting great attention in the field of spintronics due to their novel physical properties. For example, they are utilized as spin-current generating materials in spin-orbit torque (SOT) devices, which offers an electri