Basal plane oxygen exchange of epitaxial MoS2 without edge oxidation

Autor: Line Kyhl, Marco Bianchi, Charlotte E. Sanders, Jeppe V. Lauritsen, Jonathan Rodríguez-Fernández, Kristbjörg Thorarinsdottir, Signe S. Grønborg, Jill A. Miwa, Søren Ulstrup, Philip Hofmann

Publikováno v: Gronborg, S S, Thorarinsdottir, K, Kyhl, L, Rodriguez-Fernández, J, Sanders, C E, Bianchi, M, Hofmann, P, Miwa, J A, Ulstrup, S & Lauritsen, J V 2019, ' Basal plane oxygen exchange of epitaxial MoS 2 without edge oxidation ', 2D materials, vol. 6, no. 4, 045013 . https://doi.org/10.1088/2053-1583/ab2d00

The intentional formation of defects in transition-metal dichalcogenides, such as MoS2, is an attractive way to modify the electronic and chemical properties of this class of 2D materials. However, the mechanisms and methods available for selective d

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https://pure.au.dk/portal/da/publications/basal-plane-oxygen-exchange-of-epitaxial-mos2-without-edge-oxidation(30d15779-6b96-4f5c-a6a4-06af35b30673).html