Zobrazeno 1 - 10
of 1 920
pro vyhledávání: '"MoS 2"'
Autor:
Jianhong Zhang, Zesen Liu, Jiandong Ye, Weizong Xu, Feng Zhou, Dong Zhou, Rong Zhang, Fangfang Ren, Hai Lu
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 3, Pp 1-5 (2024)
Terahertz (THz) communication is a rapidly advancing field with applications spanning space exploration, wireless communication, and security checks. Achieving effective intensity modulation of THz radiation is a crucial requirement for THz technolog
Externí odkaz:
https://doaj.org/article/e5c080ef39994dafb6d31b4d7365b980
Autor:
Mohammad Amin Jalili, Fathallah Karimzadeh, Mohammad Hossein Enayati, Ehsan Naderi Kalali, Noushin Raeisi Kheirabadi
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract On account of their excellent properties, 2D nanostructures beyond graphene, such as MoS2, have extensive applications. Given their quantum confinement effects, MoS2 monolayers could efficiently trap electrons as an intermediate layer betwee
Externí odkaz:
https://doaj.org/article/bb227cddbd93490a8c7f742acf576732
Autor:
Alex Henning, Sergej Levashov, Chenjiang Qian, Theresa Grünleitner, Julian Primbs, Jonathan J. Finley, Ian D. Sharp
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 15, Pp n/a-n/a (2023)
Abstract Here, it is shown that in situ spectroscopic ellipsometry (SE) is a powerful method for probing the effects of reactant adsorption and film formation on the excitonic properties of 2D materials during atomic layer deposition (ALD), thus allo
Externí odkaz:
https://doaj.org/article/dcd30273361f4eaabcabccb508120011
Autor:
Johanna (Sanne) H. Deijkers, Arthur A. deJong, Miika J. Mattinen, Jeff J. P. M. Schulpen, Marcel A. Verheijen, Hessel Sprey, Jan Willem Maes, Wilhelmus (Erwin) M. M. Kessels, Ageeth A. Bol, Adriaan J. M. Mackus
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 12, Pp n/a-n/a (2023)
Abstract Miniaturization in integrated circuits requires that the Cu diffusion barriers located in interconnects between the Cu metal line and the dielectric material should scale down. Replacing the conventional TaN with a 2D transition metal dichal
Externí odkaz:
https://doaj.org/article/cf0691abe86647728518a52e4199b94c
Autor:
Duk Hyun Lee, Nam‐Hee Kim, Suyong Jung, Jaesung Park, Bum‐Kyu Kim, Myung‐Ho Bae, Yong Ju Yun, Sam Nyung Yi, Dong Han Ha
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 10, Pp n/a-n/a (2023)
Abstract Interfaces with surrounding materials, where charged impurities and surface roughness are present, have a significant impact on the electrical and optical properties of 2D materials. In the change of the phonon modes of MoS2 accompanied by t
Externí odkaz:
https://doaj.org/article/716d752d6a3643f58d4c1ce7cc0868fb
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 10, Pp n/a-n/a (2023)
Abstract This study reports overall improvement in structural, morphological, and optoelectronic properties of Ruddlesden–Popper (RP) perovskites of type (BA)2(MA)n−1PbnI3n+1 by forming their bulk heterojunction hybrids with few‐layer MoS2 nano
Externí odkaz:
https://doaj.org/article/a0ebafdbeb9c4eaf85fe7c7c4441b7a3
Autor:
Gowtham Polumati, Chandra Sekhar Reddy Kolli, Venkatarao Selamneni, Mario Flores Salazar, Andres De Luna Bugallo, Parikshit Sahatiya
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 9, Pp n/a-n/a (2023)
Abstract Monolayer MoS2 flakes are prepared by low‐pressure chemical vapor deposition on p‐type and n‐type silicon substrates and post‐treated under nitrogen (N2)‐rich conditions to incorporate nitrogen atoms in sulfur vacancies. Ultraviole
Externí odkaz:
https://doaj.org/article/b76a16a379c54f3e8e5b1565f94cae41
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 5, Pp n/a-n/a (2023)
Abstract 2D transition metal dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large‐scale substrates. This original additive nanolithography approach combines large‐area physical growth of 2D TMDs layer with
Externí odkaz:
https://doaj.org/article/7b65ea1985a1470cbd2eba7a9b12b669
Autor:
Timothée Barbe, Rita Rosentsveig, Olga Brontvein, M.B. Sreedhara, Kai Zheng, Françoise Bataille, Alexis Vossier, Gilles Flamant, Ivano E. Castelli, Jeffrey M. Gordon, Reshef Tenne
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 3, Pp n/a-n/a (2023)
Abstract The synthesis of fundamentally small MoS2 nanotubes and nanocones(horns) that have proven elusive in prior studies has been achieved via ablation of a precursor mixture of crystallites of MoS2 + MoO3 by highly concentrated solar radiation. T
Externí odkaz:
https://doaj.org/article/d6011cfe88fc47428c893b6b0efda79b
Autor:
Sonia Sharma, Yu‐Ting Chen, Svette Reina Merden S. Santiago, Sheenly Anne Saavedra, Chih‐Lung Chou, Kuan‐Cheng Chiu, Ji‐Lin Shen
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 2, Pp n/a-n/a (2023)
Abstract Negative differential resistance (NDR) with multi‐level resistive switching has been investigated for realizing multi‐level memory devices. However, achieving a high peak‐to‐valley ratio of NDR is a formidable challenge for a reliabl
Externí odkaz:
https://doaj.org/article/7773095ffae94ba89120733695db9c93