Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Moïse Sotto"'
Autor:
James Byers, Kapil Debnath, Hideo Arimoto, Muhammad K. Husain, Moïse Sotto, Joseph Hillier, Kian Kiang, David J. Thomson, Graham T. Reed, Martin Charlton, Shinichi Saito
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transver
Externí odkaz:
https://doaj.org/article/44291f4c1c654614bcedf01afea77c87
Autor:
Kouta Ibukuro, Fayong Liu, Muhammad Khaled Husain, Moïse Sotto, Joseph Hillier, Zuo Li, Isao Tomita, Yoshishige Tsuchiya, Harvey Rutt, Shinichi Saito
Publikováno v:
AIP Advances, Vol 10, Iss 11, Pp 115101-115101-12 (2020)
The need for hardware random number generators (HRNGs) that can be integrated in a silicon (Si) complementary-metal–oxide–semiconductor (CMOS) platform has become increasingly important in the era of the Internet-of-Things (IoT). Si MOSFETs exhib
Externí odkaz:
https://doaj.org/article/5069d148805e4e168a8e1df58705db3d
Publikováno v:
Frontiers in Physics, Vol 6 (2018)
In a line-defect waveguide of a planer photonic crystal (PhC), we found a new rotational state of polarized light, which exhibits “polarization rotation” on the PhC plane, when a phase mismatch m was added to the air-hole alignment of the wavegui
Externí odkaz:
https://doaj.org/article/73ff47bed808418584dfdee4420e3b68
Autor:
Moïse Sotto, Hideo Arimoto, Kapil Debnath, David J. Thomson, James Byers, Shinichi Saito, Joseph William Hillier, Kian Shen Kiang, Martin D. B. Charlton, Graham T. Reed, Muhammad Husain
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59d6ff964dd7078cb294a4ed052f4d21
https://doi.org/10.3389/fphy.2021.659585
https://doi.org/10.3389/fphy.2021.659585
Publikováno v:
Nanophotonics and Micro/Nano Optics VI.
Ge epitaxial layer is grown on a bonded Si-on-quartz (SOQ) wafer by ultrahigh vacuum chemical vapor deposition. A tensile strain as large as 0.4% is generated in Ge grown on SOQ, which is almost two times larger than ~0.2% in Ge grown on an ordinary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aafa106e649e02b0597c94349b826ee9
https://doi.org/10.1117/12.2575522
https://doi.org/10.1117/12.2575522
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications. 26:1-7
Dataset supports: Prasmusinto, A. (2017). Theoretical designs for novel photonic crystal nanocavities with Si (111) interfaces. Photonics and Nanostructures - Fundamentals and Applications, 26, 1-7.We designed a series of photonic crystal (PhC) nanoc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ad649c63c9c24ea5c8b1b32ae9f1b19
https://doi.org/10.1016/j.photonics.2017.02.005
https://doi.org/10.1016/j.photonics.2017.02.005
Publikováno v:
Nanophotonics and Micro/Nano Optics V.
A spontaneous formation of SiGe is reported, which is induced at mesa sidewalls of Si-capped Ge epitaxial layers selectively grown on Si. Ultrahigh-vacuum chemical vapor deposition is used to grow Ge mesa stripes on (001) Si wafers partially covered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3836892cfc2b112a4abb4668a09df48
https://doi.org/10.1117/12.2537485
https://doi.org/10.1117/12.2537485
Publikováno v:
Physical Review A. 99
We investigate the effect of breaking the parity of a photonic crystal waveguide designed to have odd and even modes intersecting inside the photonic bandgap. The complete study on the wavefields properties of the resulting bonding modes uncovers tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a663d388b2dadb717e152f5332054ef1
https://doi.org/10.1103/physreva.99.053845
https://doi.org/10.1103/physreva.99.053845
Autor:
Zuo Li, Harvey N. Rutt, Moïse Sotto, Fayong Liu, Yoshishige Tsuchiya, Kouta Ibukuro, Isao Tomita, Joseph William Hillier, Shinichi Saito, Muhammad Husain
Publikováno v:
AIP Advances, Vol 10, Iss 11, Pp 115101-115101-12 (2020)
The need for hardware random number generators (HRNGs) that can be integrated in a silicon (Si) complementary-metal-oxide-semiconductor (CMOS) platform has become increasingly important in the era of the Internet-of-Things (IoT). Si MOSFETs exhibitin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aa7745dbb013f45983fb209ddcbefc6
https://doaj.org/article/5069d148805e4e168a8e1df58705db3d
https://doaj.org/article/5069d148805e4e168a8e1df58705db3d
Publikováno v:
2018 IEEE 15th International Conference on Group IV Photonics (GFP).
Breaking the parity symmetry of a photonic crystal waveguides can lead to the bonding of guided modes with orthogonal dominant polarizations. Here we present how this coupling allows anomalous zero-group-velocity and prominent circular polarization t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa16d24a0372ec45c93569d8da1c58a
https://doi.org/10.1109/group4.2018.8478754
https://doi.org/10.1109/group4.2018.8478754